Transistors (results: 8519)
Product | Cart |
Open channel resistance
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Max. drain current
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Max. power loss
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Case
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Manufacturer
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Power dissipation
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Current gain factor
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Cutoff frequency
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Gate charge
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Max. dissipated power
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Max. drain-source voltage
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Max. collector current
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Max collector-emmiter voltage
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Max. collector current
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Max collector current (impulse)
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Forvard volatge [Vgeth]
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Transistor type
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Max. drain-gate voltage
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Operating temperature (range)
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Max. gate-source Voltage
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Collector-emitter voltage
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Mounting
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Gate-emitter voltage
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Transistor circuits [Y/N]
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Item available on a request
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STP80NF55-06FP
Trans MOSFET N-CH 55V 60A
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6,5mOhm | 60A | 45W | TO220iso | STMicroelectronics | 55V | N-MOSFET | -55°C ~ 175°C | 20V | THT | |||||||||||||||||
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Item available on a request
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STQ1HNK60R
N-CHANNEL 600V 8Ohm 1A TO-92 SuperMESH PowerMOSFET
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8,5Ohm | 400mA | 3W | TO92 | ST | 600V | N-MOSFET | 600V | -55°C ~ 150°C | 30V | THT | ||||||||||||||||
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Item available on a request
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PHPT60606NYX NXP
NPN 6A 60V 1.35W 180MHz
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Item available on a request
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SUD40N10-25-E3
Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) DPAK
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63mOhm | 40A | 136W | TO252 (DPACK) | VISHAY | 100V | N-MOSFET | -55°C ~ 175°C | 20V | SMT | |||||||||||||||||
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Item available on a request
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60N06
Transistor MOSFET; TO-252; N-Channel; NO ESD; 60V; 50A; 69W; 1.4V; 14mΩ; 15mΩ SUD50N06-09L; FDD5680; G58N06K GOFORD
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Item available on a request
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G70P04K
Transistor MOSFET; TO-252; P-Channel; NO ESD; -40V; -70A; 156W; -1.4V; 7mΩ; 9mΩ SUD50P04-08;
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Item available on a request
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SUD50P04-09L-E3
Single P-Channel MOSFET 40V 0.0094 Ohm
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Item available on a request
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SUM90140E-GE3
Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK
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Item available on a request
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SUP57N20-33-E3 VISHAY
Transistor; N-MOSFET; unipolar; 200V; 57A; 300W
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93mOhm | 57A | 300W | TO220 | VISHAY | 200V | N-MOSFET | -55°C ~ 175°C | 20V | THT | |||||||||||||||||
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Item available on a request
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GT080N10T
Transistor MOSFET; TO-220; N-Channel; NO ESD; 100V; 70A; 100W; 1.5V; 6mΩ; 8mΩ SUP70090E;
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Item available on a request
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TC6320TG-G
N/P-MOSFET 2A 200V 7/8Ω
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SOP08 | MICROCHIP | N/P-MOSFET | -55°C ~ 150°C | SMD | ||||||||||||||||||||||
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Item available on a request
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TK100E08N1,S1X(S
Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220
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Item available on a request
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TK110P10PL,RQ(S2
Mosfet, N-ch, 100V, 40A, TO-252
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Item available on a request
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PXT8050 China
NPN 1500mA 25V 625mW 100MHz
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Item available on a request
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PXT8550 China
PNP -1500mA -25V 625mW 120MHz
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Item available on a request
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PZTA44-QX
Trans GP BJT NPN 500V 0.3A 1350mW 4-Pin(3+Tab) SC-73
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Item available on a request
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QS5K2TR
2N-MOSFET 30V 2A 1.25W
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Item available on a request
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TK25E60X,S1X(S
PWR-MOSFET N-CHANNEL
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Item available on a request
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TK40E06N1,S1X(S
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine
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Item available on a request
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TPC8124 SOP8 TOSHIBA
Trans MOSFET P-CH Si 40V 12A 8-Pin SOP T/R TPC8124(TE12L,Q,M); TPC8124(TE12L,V); TPC8124(TE12L,V,M);
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Item available on a request
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S8050 China
NPN 500mA 25V 300mW 150MHz MOSLEADER S8050-ML; KST8050S;
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Item available on a request
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TPH2R608NH,L1Q
Trans MOSFET N-CH Si 75V 168A 8-Pin SOP Advance TPH2R608NH,L1Q(M
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Item available on a request
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S9012 China
PNP -500mA -25V 300mW 150MHz MOSLEADER S9012-ML;
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Item available on a request
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S9012 SOT23 BORN
Transistor PNP; Bipolar; 25V; 300mW; 40V; 500mA; 150MHz; -55°C~150°C;
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SOT23 | BORN | 300mW | 400 | 150MHz | 500mA | 25V | PNP | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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S9013 SOT23 BORN
Transistor NPN; Bipolar; 25V; 300mW; 40V; 500mA; 150MHz; -55°C~150°C;
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SOT23 | BORN | 300mW | 400 | 150MHz | 500mA | 25V | NPN | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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S9014 SOT23 BORN
Transistor NPN; Bipolar; 45V; 200mW; 50V; 100mA; 300MHz; -55°C~150°C; Replacement: BC850C;
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SOT23 | BORN | 200mW | 10000 | 150MHz | 100mA | 45V | NPN | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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S9015 SOT23 BORN
Transistor PNP; Bipolar; 45V; 200mW; 50V; 100mA; 150MHz; -55°C~150°C;
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SOT23 | BORN | 200mW | 1000 | 150MHz | 100mA | 45V | PNP | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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S9018 China
NPN 50mA 15V 200mW 700MHz MOSLEADER S9018-ML;
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Item available on a request
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S9018 SOT23 BORN
Transistor NPN; Bipolar; 5V; 200mW; 30V; 50mA; 850MHz; -55°C ~ 150°C;
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SOT23 | BORN | 200mW | 850MHz | 50mA | 15V | NPN | -55°C ~ 150°C | |||||||||||||||||||
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Item available on a request
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Transistors
Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.
What is a transistor and what is it used for?
Transistor is a semiconductor that has the capability of amplifying the electric signal.
The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:
- It is the most important part of amplifiers;
- It is used as a structural element in semiconductor memory;
- It takes part in a signal transmission, e.g. in phase shift modules and generators;
Types of transistors
It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:
- Field effect transistors
- Bipolar transistors
- IGBT transistors
We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.
Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.
Transistors in our offer
Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.
Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.