Transistors (results: 8519)
Product | Cart |
Open channel resistance
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Max. drain current
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Max. power loss
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Case
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Manufacturer
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Power dissipation
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Current gain factor
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Cutoff frequency
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Gate charge
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Max. dissipated power
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Max. drain-source voltage
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Max. collector current
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Max collector-emmiter voltage
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Max. collector current
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Max collector current (impulse)
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Forvard volatge [Vgeth]
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Transistor type
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Max. drain-gate voltage
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Operating temperature (range)
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Max. gate-source Voltage
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Collector-emitter voltage
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Mounting
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Gate-emitter voltage
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Transistor circuits [Y/N]
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R6015KNX Rohm Semiconductor
NCH 600V 15A POWER MOSFET TO-220-3 Full Pack
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290mOhm | 15A | 60W | TO220FP | ROHM | 600V | N-MOSFET | -55°C ~ 150°C | 30V | THT | |||||||||||||||||
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Item available on a request
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KSA1220A
PNP,200mA,160V,1.2W, 175MHz Complement to KSC2690/KSC2690A
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TO126 | ON SEMICONDUCTOR | 1,2W | 320 | 175MHz | 1,2A | 160V | PNP | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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RD01MUS2B-T113
Transistor Mitsubishi
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600mA | 3,6W | SOT89 | Mitsubishi Electric | 25V | N-MOSFET | -40°C ~ 125°C | 10V | SMD | ||||||||||||||||||
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Item available on a request
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KSH122TF
NPN 8A 100V 1.75W
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TO252 (DPACK) | Fairchild | 1,75W | 12000 | 8A | 100V | NPN | -65°C ~ 150°C | |||||||||||||||||||
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Item available on a request
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RFD14N05L
N-MOSFET 14A 50V 48W 0.1Ω
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100mOhm | 14A | 48W | TO251 (IPACK) | ON SEMICONDUCTOR | 50V | N-MOSFET | 50V | -55°C ~ 175°C | 10V | THT | ||||||||||||||||
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Item available on a request
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LGE18N50F LGE
Odpowiednik: BXP18N50F; LGE18N50F; YFW13N50AF;
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Item available on a request
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LGE2N65D TO252 LGE
Odpowiednik: BXP2N65D; LGE2N65D; YFW2N65AD;
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Item available on a request
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Item in delivery
Estimated time: 2025-06-20
Quantity of pieces: 500
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LND150N3-G
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92
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TO92 | Supertex | 740mW | 30mA | 500V | N-MOSFET | -55°C ~ 150°C | ||||||||||||||||||||
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Item available on a request
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LP395Z
NPN 36V 100mA
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TO92 | Texas Instruments | 100mA | 36V | NPN | -40°C ~ 125°C | |||||||||||||||||||||
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Item available on a request
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LPSC2301
20V 2A 110mOhm@4.5V,2A 780mW P Channel SOT-23 MOSFETs ROHS BSS83P;
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Item available on a request
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M8050 SOT23
0.2W 800mA NPN Bipolar Trans.
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Item available on a request
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MBT3904DW1T1G
40V 200mW 300@10mA,1V 200mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS LRC LMBT3904DW1T1G;
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Item available on a request
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Item in delivery
Estimated time: 2025-05-20
Quantity of pieces: 3000
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RQ3E100BNTB Rohm Semiconductor
MOSFET N-CH 30V 10A HSMT8 8-PowerVDFN
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Item available on a request
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MJD127
Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252 MJD127-LGE
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Item available on a request
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RV8C010UNHZGG2CR 3-Pin DFN-W ROHM
Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN-W
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Item available on a request
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RV8L002SNHZGG2CR DFN1010-3W ROHM
N-Channel 60 V 250mA (Ta) 1W (Ta) Surface Mount DFN1010-3W
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Item available on a request
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MJD31C CDIL
Tranzystor NPN; 50; 1,25W; 100V; 3A; 3MHz; -65°C ~ 150°C; Odpowiednik: MJD31C-13; MJD31C1G;
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TO252 | LGE | 1,25W | 50 | 3MHz | 3A | 100V | NPN | -65°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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MJD32CAJ DPAK(SOT428C) NEXPERIA
Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.6W Surface Mount DPAK
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DPAK | Nexperia | 1,6W | 50 | 3MHz | 3A | 100V | PNP | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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MJD45H11-1G
Trans GP BJT PNP 80V 16A 1750mW 3-Pin(3+Tab) IPAK
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Item available on a request
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MJD5731T4G ONSEMI
Trans GP BJT PNP 350V 1A
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Item available on a request
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MJD6039T4G
Trans Darlington NPN 80V 4A 1750mW 3-Pin(2+Tab) DPAK
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Item available on a request
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MJE13005
Transistor; bipolar; MJE13005; NPN; 4A; 400V; 60W; 4 MHz; TO220; ST13005; MJE13005; 3DD13005ED-220C; YFW13005AT; MJE13005L-B-TA3-T; 3DD13005ND66; 3DD13005MD-220; MJE13005; MBR13005DA; ST13005;
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Item available on a request
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YFW13005AT
Transistor NPN; Bipolar; 700V; 9V; 35; 4MHz; 4A; 2W; -55°C~150°C;
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TO220 | YFW | 2W | 35 | 4MHz | 4A | 700V | NPN | -55°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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MJE15030G ON Semiconductor
NPN 150V 8A 50W 30MHz
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TO220AB | ON SEMICONDUCTOR | 2W | 40 | 30MHz | 8A | 150V | NPN | -65°C ~ 150°C | ||||||||||||||||||
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Item available on a request
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MJE340G JSMICRO
Transistor NPN; 240; 20W; 300V; 500mA; -65°C ~ 150°C; Equivalent: MJE340; MJE340STU; KSE340; KSE340STU;
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TO126 | JSMICRO | 20W | 240 | 500mA | 300V | NPN | -65°C ~ 150°C | |||||||||||||||||||
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Item available on a request
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SI1330EDL-T1-E3 VISHAY
Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70
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Item available on a request
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SI1902DL-T1-E3
2N-MOSFET 20V 660mA 270mW
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630mOhm | 660mA | 270mW | SC70-6 | VISHAY | 20V | 2xN-MOSFET | -55°C ~ 150°C | 12V | SMD | |||||||||||||||||
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Item available on a request
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SI2302A-TP
N-Channel Enhancement Mode Field Effect Transistor
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Item available on a request
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KSI2302CDS-T1-GE3 KUU
Tranzystor N-MOSFET; 20V; 10V; 59mOhm; 2,9A; 1W; -55°C ~ 150°C; KSI2302CDS-T1-GE3;
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59mOhm | 2,9A | 1W | SOT23 | KUU | 20V | N-MOSFET | -55°C ~ 150°C | 10V | SMD | |||||||||||||||||
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Item available on a request
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G29
Transistor MOSFET; SOT-23; P-Channel; NO ESD; -15V; -4.1A; 1.05W; -0.55V; ; 24mΩ SI2305-TP;
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Item available on a request
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Transistors
Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.
What is a transistor and what is it used for?
Transistor is a semiconductor that has the capability of amplifying the electric signal.
The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:
- It is the most important part of amplifiers;
- It is used as a structural element in semiconductor memory;
- It takes part in a signal transmission, e.g. in phase shift modules and generators;
Types of transistors
It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:
- Field effect transistors
- Bipolar transistors
- IGBT transistors
We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.
Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.
Transistors in our offer
Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.
Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.