Unipolar Transistors (results: 5473)
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Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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MS1N250HGC0
MOSFET 1A,2500V,TO-247
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Item available on a request
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MS30N90ICE0
MOSFET 30A,900V,TO-263
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Item available on a request
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MS4N250HGC0
MOSFET 4A,2500V,TO-247
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Item available on a request
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MS5N170FC
MOSFET 5A,1700V,TO-247
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Item available on a request
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MS6N120FE
MOSFET 6A,1200V,TO-263
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Item available on a request
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MS8N100FT
MOSFET 8A,1000V,TO-220
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Item available on a request
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MS9N150H1
MOSFET 9A,1500V,TO-247
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Item available on a request
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TP0610K SOT23(T/R) TECH PUBLIC
60V 500mA 360mW 1.7Ohm@10V,0.5A 1.8V SOT-23(TO-236) MOSFETs ROHS
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Item available on a request
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Item in delivery
Estimated time: 2025-05-09
Quantity of pieces: 300
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FDC5614P
60V 3A 105m?@10V,3A 1.6W 3V@250uA 1 Piece P-Channel MOSFET YFW3P06LI
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Item available on a request
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STD26P3LLH6
Trans P-MOSFET 30V 12A
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Item available on a request
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IRL540N
Tranzystor N-Channel MOSFET; 100V; 16V; 63mOhm; 36A; 140W; -55°C ~ 175°C; Odpowiednik: IRL540NPBF; IRL 540 NPBF;
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G1003A Goford Semiconductor
N100V,RD(MAX)<210M@10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G1006LE Goford Semiconductor
N100V,RD(MAX)<150M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G70N04T Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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G75P04K Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Transistors - FETs, MOSFETs - Single
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Item available on a request
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G7P03L Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Transistors - FETs, MOSFETs - Single
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Item available on a request
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G86N06K Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT100N12D5 Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
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GT100N12T Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
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GT105N10T Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT110N06S Goford Semiconductor
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT52N10T Goford Semiconductor
N100V,RD(MAX)<9M@10V,RD(MAX)<15M Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT55N06D5 Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT650N15K Goford Semiconductor
N150V,RD(MAX)<65M@10V,VTH2.5V~4. Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT700P08S
Transistor MOSFET; SOP-8; P-Channel; NO ESD; -80V; -6.5A; 3W; -2.5V; 60mΩ
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.