Unipolar Transistors (results: 5473)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
MS1N250HGC0 MOSFET 1A,2500V,TO-247
MS1N250HGC0  
 
 
Item available on a request
                     
MS30N90ICE0 MOSFET 30A,900V,TO-263
MS30N90ICE0  
 
 
Item available on a request
                     
MS4N250HGC0 MOSFET 4A,2500V,TO-247
MS4N250HGC0  
 
 
Item available on a request
                     
MS5N170FC MOSFET 5A,1700V,TO-247
MS5N170FC  
 
 
Item available on a request
                     
MS6N120FE MOSFET 6A,1200V,TO-263
MS6N120FE  
 
 
Item available on a request
                     
MS8N100FT MOSFET 8A,1000V,TO-220
MS8N100FT  
 
 
Item available on a request
                     
MS9N150H1 MOSFET 9A,1500V,TO-247
MS9N150H1  
 
 
Item available on a request
                     
TP0610K SOT23(T/R) TECH PUBLIC 60V 500mA 360mW 1.7Ohm@10V,0.5A 1.8V SOT-23(TO-236) MOSFETs ROHS
TP0610K SOT23(T/R) TECH PUBLIC SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-09
Quantity of pieces: 300
                     
CMF75NF75 TO220F CMOS TO220F
 
 
Item available on a request
                     
CMB75NF75 TO263 CMOS TO263
 
 
Item available on a request
                     
IRLML2244 SOT23
 
 
Item available on a request
                     
FDC5614P 60V 3A 105m?@10V,3A 1.6W 3V@250uA 1 Piece P-Channel MOSFET YFW3P06LI
FDC5614P SSOT6L
 
 
Item available on a request
                     
STD26P3LLH6 Trans P-MOSFET 30V 12A
STD26P3LLH6 DPAK
 
 
Item available on a request
                     
IRL540N Tranzystor N-Channel MOSFET; 100V; 16V; 63mOhm; 36A; 140W; -55°C ~ 175°C; Odpowiednik: IRL540NPBF; IRL 540 NPBF;
IRL540N TO220
 
 
Item available on a request
                     
AONS66811  
 
 
Item available on a request
                     
AONR66820  
 
 
Item available on a request
                     
G1003A Goford Semiconductor N100V,RD(MAX)<210M@10V,RD(MAX)<2 Transistors - FETs, MOSFETs - Single
G1003A Goford Semiconductor  
 
 
Item available on a request
                     
G1006LE Goford Semiconductor N100V,RD(MAX)<150M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
G1006LE Goford Semiconductor  
 
 
Item available on a request
                     
G70N04T Goford Semiconductor N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Transistors - FETs, MOSFETs - Single
G70N04T Goford Semiconductor  
 
 
Item available on a request
                     
G75P04K Goford Semiconductor P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Transistors - FETs, MOSFETs - Single
G75P04K Goford Semiconductor  
 
 
Item available on a request
                     
G7P03L Goford Semiconductor P30V,RD(MAX)<23M@-10V,RD(MAX)<34 Transistors - FETs, MOSFETs - Single
G7P03L Goford Semiconductor  
 
 
Item available on a request
                     
G86N06K Goford Semiconductor N60V,RD(MAX)<8.4M@10V,VTH2V~4V , Transistors - FETs, MOSFETs - Single
G86N06K Goford Semiconductor  
 
 
Item available on a request
                     
GT100N12D5 Goford Semiconductor N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
GT100N12D5 Goford Semiconductor  
 
 
Item available on a request
                     
GT100N12T Goford Semiconductor N120V,RD(MAX)<10M@10V,VTH2.5V~3. Transistors - FETs, MOSFETs - Single
GT100N12T Goford Semiconductor  
 
 
Item available on a request
                     
GT105N10T Goford Semiconductor N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
GT105N10T Goford Semiconductor  
 
 
Item available on a request
                     
GT110N06S Goford Semiconductor N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
GT110N06S Goford Semiconductor  
 
 
Item available on a request
                     
GT52N10T Goford Semiconductor N100V,RD(MAX)<9M@10V,RD(MAX)<15M Transistors - FETs, MOSFETs - Single
GT52N10T Goford Semiconductor  
 
 
Item available on a request
                     
GT55N06D5 Goford Semiconductor N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Transistors - FETs, MOSFETs - Single
GT55N06D5 Goford Semiconductor  
 
 
Item available on a request
                     
GT650N15K Goford Semiconductor N150V,RD(MAX)<65M@10V,VTH2.5V~4. Transistors - FETs, MOSFETs - Single
GT650N15K Goford Semiconductor  
 
 
Item available on a request
                     
GT700P08S Transistor MOSFET; SOP-8; P-Channel; NO ESD; -80V; -6.5A; 3W; -2.5V; 60mΩ
GT700P08S SOP08
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.