Unipolar Transistors (results: 5478)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
GT095N10K Goford Semiconductor N100V, RD(MAX)<10.5M@10V,RD(MAX) Transistors - FETs, MOSFETs - Single
GT095N10K Goford Semiconductor  
 
 
Item available on a request
                     
GT105N10F Goford Semiconductor N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
GT105N10F Goford Semiconductor  
 
 
Item available on a request
                     
GT52N10D5 Goford Semiconductor N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
GT52N10D5 Goford Semiconductor  
 
 
Item available on a request
                     
HUF75345G3 Trans MOSFET N-CH Si 55V 75A
HUF75345G3 TO247
  N-MOSFET 55V 55V 20V 7mOhm 75A 325W THT -55°C ~ 175°C TO247 ON SEMICONDUCTOR
 
Item available on a request
                     
HUF76639S3ST Trans MOSFET N-CH 100V 51A (HUF76639P3 TO220AB *OBSOLETE)
HUF76639S3ST TO263 (D2PAK)
 
 
Item available on a request
                     
IMZA65R072M1H Trans MOSFET N-CH SiC 650V 28A 4-Pin(4+Tab) TO-247 IMZA65R072M1HXKSA1
IMZA65R072M1H TO247
 
 
Item available on a request
                     
IPA65R150CFD N-MOSFET 22.4A 650V 34.7W 0.15Ω IPA65R150CFDXKSA1
IPA65R150CFD TO220iso
  N-MOSFET 700V 30V 351mOhm 22,4A 195,3W THT -55°C ~ 150°C TO220iso Infineon Technologies
 
Item available on a request
                     
IPB010N06NATMA1 Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK
IPB010N06NATMA1 D2PAK
 
 
Item available on a request
                     
G120P06M Transistor MOSFET; TO-263; P-Channel; NO ESD; -60V; -120A; 277W; -2.5V; 7mΩ IPB110P06LM; IRF9Z34S, SiHF9Z34S
G120P06M TO263
 
 
Item available on a request
                     
IPB60R190C6 INFINEON Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK IPB60R190C6ATMA1
IPB60R190C6 INFINEON D2PAK
 
 
Item available on a request
                     
G80P03K Transistor MOSFET; TO-252; P-Channel; NO ESD; -30V; -80A; 78W; -1.4V; 4.5mΩ; 6mΩ IPD042P03L3G; AOD21357
G80P03K TO252
 
 
Item available on a request
                     
IPD075N03LG Infineon N-MOSFET 30V 50A 47W 7.5mΩ
IPD075N03LG Infineon TO252/3 (DPAK)
  N-MOSFET 30V 20V 11,4mOhm 50A 47W SMD -55°C ~ 175°C TO252/3 (DPAK) Infineon Technologies
 
Item available on a request
                     
IPD135N03LGATMA1 Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
IPD135N03LGATMA1 DPAK
 
 
Item available on a request
                     
IPD50P04P4L11ATMA2 Transistor P-Channel MOSFET; 40V; 10V; 10,6mOhm; 50A; 58W; -55°C~175°C; Replacement: IPD50P04P4L-11; IPD50P04P4L11ATMA1; IPD50P04P4L11ATMA2; IPD50P04P4L11;
IPD50P04P4L11ATMA2 DPAK
  P-MOSFET 40V 10V 10,6mOhm 50A 58W SMD -55°C ~ 175°C DPAK INFINEON
 
Item available on a request
                     
IPD60R280CFD7ATMA1 Transistor N-Channel MOSFET; 650V; 20V; 280mOhm; 9A; 51W; -55°C~150°C;
IPD60R280CFD7ATMA1 TO252/3 (DPAK)
  N-MOSFET 650V 20V 280mOhm 9A 51W SMD -55°C ~ 150°C DPAK INFINEON
 
Item available on a request
                     
IPD60R280P7ATMA1 Transistor: N-MOSFET ; unipolarny ; 600V ; 8A ; 53W ; PG-TO252-3 600V CoolMOS P7 Power Transistor
IPD60R280P7ATMA1 DPAK
 
 
Item available on a request
                     
IPD60R280P7S Infineon Technologies MOSFET N-CH 600V 12A TO252-3 IPD60R280P7SAUMA1
IPD60R280P7S Infineon Technologies TO252
  N-MOSFET 650V 20V 501mOhm 12A 53W SMD -40°C ~ 150°C TO252 Infineon Technologies
 
Item available on a request
                     
IPD60R2K0PFD7S Transistor: N-MOSFET | CoolMOSt PFD7 | unipolarny | 650V | 1,9A | 20W IPD60R2K0PFD7SAUMA1
IPD60R2K0PFD7S DPAK
 
 
Item available on a request
                     
IPD60R360P7ATMA1 Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK
IPD60R360P7ATMA1 DPAK
 
 
Item available on a request
                     
IPD65R660CFDATMA2 LOW POWER_LEGACY Transistors - FETs, MOSFETs - Single
IPD65R660CFDATMA2 DPAK
 
 
Item available on a request
                     
IPD70N10S3L-12 Infineon N-MOSFET 100V 70A 125W 11.5mΩ
IPD70N10S3L-12 Infineon TO252
  N-MOSFET 100V 20V 15,2mOhm 70A 125W SMD -55°C ~ 175°C TO252 Infineon Technologies
 
Item available on a request
                     
IPD70P04P409ATMA1 Trans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK
IPD70P04P409ATMA1 DPAK
 
 
Item available on a request
                     
G60N04D52 Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 40V; 35A; 20W; 1.8V; 9mΩ; 12mΩ IPG20N04S4L08ATMA1; AON6884
G60N04D52 DFN08(5x6)
 
 
Item available on a request
                     
IPG20N06S4L11ATMA1 MOSFET 2N-CH 8TDSON Transistors - FETs, MOSFETs - Arrays
IPG20N06S4L11ATMA1  
 
 
Item available on a request
                     
IPN80R1K2P7ATMA1 Transistor N-Channel MOSFET; 800V; +/-20V; 1,2Ohm; 4,5A; 6,8W; -55°C~150°C;
IPN80R1K2P7ATMA1 SOT223
  N-MOSFET 800V 20V 1,2Ohm 4,5A 6,8W SMD -55°C ~ 150°C SOT223 INFINEON
 
Item available on a request
                     
IPP034N03LG Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube IPP034N03LGXKSA1
IPP034N03LG TO220
 
 
Item available on a request
                     
IPP041N12N3G Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-220 Tube IPP041N12N3GXKSA1
IPP041N12N3G TO220
  N-MOSFET 120V 20V 4,1mOhm 120A 300W THT -55°C ~ 175°C TO220 Infineon Technologies
 
Item available on a request
                     
IRF1404 JSMICRO Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; -55°C ~ 175°C; Equivalent: IRF1404PBF; SP001561374;
IRF1404 JSMICRO TO220
  N-MOSFET 40V 20V 4mOhm 230A 285W THT -55°C ~ 175°C TO220 JSMICRO
 
Item available on a request
                     
IRF3711 Transistor N-Channel MOSFET; 20V; 20V; 8,5mOhm; 110A; 120W; -55°C ~ 150°C; IRF3711PBF
IRF3711 TO220
  N-MOSFET 20V 20V 8,5mOhm 110A 120W THT -55°C ~ 150°C TO220 International Rectifier
 
Item available on a request
                     
IRF4905 Transistor P-Channel MOSFET; 55V; 20V; 20mOhm; 74A; 200W; -55°C ~ 175°C; IRF4905PBF; IRF 4905 PBF;
IRF4905 TO220
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.