Unipolar Transistors (results: 5478)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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GT095N10K Goford Semiconductor
N100V, RD(MAX)<10.5M@10V,RD(MAX) Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT105N10F Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)< Transistors - FETs, MOSFETs - Single
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Item available on a request
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GT52N10D5 Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Transistors - FETs, MOSFETs - Single
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Item available on a request
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HUF75345G3
Trans MOSFET N-CH Si 55V 75A
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N-MOSFET | 55V | 55V | 20V | 7mOhm | 75A | 325W | THT | -55°C ~ 175°C | TO247 | ON SEMICONDUCTOR | |||
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Item available on a request
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HUF76639S3ST
Trans MOSFET N-CH 100V 51A (HUF76639P3 TO220AB *OBSOLETE)
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Item available on a request
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IMZA65R072M1H
Trans MOSFET N-CH SiC 650V 28A 4-Pin(4+Tab) TO-247 IMZA65R072M1HXKSA1
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Item available on a request
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IPA65R150CFD
N-MOSFET 22.4A 650V 34.7W 0.15Ω IPA65R150CFDXKSA1
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N-MOSFET | 700V | 30V | 351mOhm | 22,4A | 195,3W | THT | -55°C ~ 150°C | TO220iso | Infineon Technologies | ||||
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Item available on a request
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IPB010N06NATMA1
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK
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Item available on a request
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G120P06M
Transistor MOSFET; TO-263; P-Channel; NO ESD; -60V; -120A; 277W; -2.5V; 7mΩ IPB110P06LM; IRF9Z34S, SiHF9Z34S
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Item available on a request
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IPB60R190C6 INFINEON
Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK IPB60R190C6ATMA1
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Item available on a request
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G80P03K
Transistor MOSFET; TO-252; P-Channel; NO ESD; -30V; -80A; 78W; -1.4V; 4.5mΩ; 6mΩ IPD042P03L3G; AOD21357
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Item available on a request
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IPD075N03LG Infineon
N-MOSFET 30V 50A 47W 7.5mΩ
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N-MOSFET | 30V | 20V | 11,4mOhm | 50A | 47W | SMD | -55°C ~ 175°C | TO252/3 (DPAK) | Infineon Technologies | ||||
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Item available on a request
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IPD135N03LGATMA1
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK
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Item available on a request
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IPD50P04P4L11ATMA2
Transistor P-Channel MOSFET; 40V; 10V; 10,6mOhm; 50A; 58W; -55°C~175°C; Replacement: IPD50P04P4L-11; IPD50P04P4L11ATMA1; IPD50P04P4L11ATMA2; IPD50P04P4L11;
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P-MOSFET | 40V | 10V | 10,6mOhm | 50A | 58W | SMD | -55°C ~ 175°C | DPAK | INFINEON | ||||
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Item available on a request
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IPD60R280CFD7ATMA1
Transistor N-Channel MOSFET; 650V; 20V; 280mOhm; 9A; 51W; -55°C~150°C;
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N-MOSFET | 650V | 20V | 280mOhm | 9A | 51W | SMD | -55°C ~ 150°C | DPAK | INFINEON | ||||
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Item available on a request
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IPD60R280P7ATMA1
Transistor: N-MOSFET ; unipolarny ; 600V ; 8A ; 53W ; PG-TO252-3 600V CoolMOS P7 Power Transistor
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Item available on a request
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IPD60R280P7S Infineon Technologies
MOSFET N-CH 600V 12A TO252-3 IPD60R280P7SAUMA1
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N-MOSFET | 650V | 20V | 501mOhm | 12A | 53W | SMD | -40°C ~ 150°C | TO252 | Infineon Technologies | ||||
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Item available on a request
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IPD60R2K0PFD7S
Transistor: N-MOSFET | CoolMOSt PFD7 | unipolarny | 650V | 1,9A | 20W IPD60R2K0PFD7SAUMA1
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Item available on a request
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IPD60R360P7ATMA1
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK
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Item available on a request
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IPD65R660CFDATMA2
LOW POWER_LEGACY Transistors - FETs, MOSFETs - Single
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Item available on a request
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IPD70N10S3L-12 Infineon
N-MOSFET 100V 70A 125W 11.5mΩ
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N-MOSFET | 100V | 20V | 15,2mOhm | 70A | 125W | SMD | -55°C ~ 175°C | TO252 | Infineon Technologies | ||||
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Item available on a request
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IPD70P04P409ATMA1
Trans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK
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Item available on a request
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G60N04D52
Transistor MOSFET; DFN5*6-8L; DUAL; N+N-Channel; NO ESD; 40V; 35A; 20W; 1.8V; 9mΩ; 12mΩ IPG20N04S4L08ATMA1; AON6884
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Item available on a request
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IPG20N06S4L11ATMA1
MOSFET 2N-CH 8TDSON Transistors - FETs, MOSFETs - Arrays
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Item available on a request
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IPN80R1K2P7ATMA1
Transistor N-Channel MOSFET; 800V; +/-20V; 1,2Ohm; 4,5A; 6,8W; -55°C~150°C;
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N-MOSFET | 800V | 20V | 1,2Ohm | 4,5A | 6,8W | SMD | -55°C ~ 150°C | SOT223 | INFINEON | ||||
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Item available on a request
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IPP034N03LG
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220 Tube IPP034N03LGXKSA1
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Item available on a request
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IPP041N12N3G
Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-220 Tube IPP041N12N3GXKSA1
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N-MOSFET | 120V | 20V | 4,1mOhm | 120A | 300W | THT | -55°C ~ 175°C | TO220 | Infineon Technologies | ||||
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Item available on a request
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IRF1404 JSMICRO
Transistor N-Channel MOSFET; 40V; 20V; 4mOhm; 230A; 285W; -55°C ~ 175°C; Equivalent: IRF1404PBF; SP001561374;
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N-MOSFET | 40V | 20V | 4mOhm | 230A | 285W | THT | -55°C ~ 175°C | TO220 | JSMICRO | ||||
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Item available on a request
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IRF3711
Transistor N-Channel MOSFET; 20V; 20V; 8,5mOhm; 110A; 120W; -55°C ~ 150°C; IRF3711PBF
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N-MOSFET | 20V | 20V | 8,5mOhm | 110A | 120W | THT | -55°C ~ 150°C | TO220 | International Rectifier | ||||
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Item available on a request
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IRF4905
Transistor P-Channel MOSFET; 55V; 20V; 20mOhm; 74A; 200W; -55°C ~ 175°C; IRF4905PBF; IRF 4905 PBF;
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.