Unipolar Transistors (results: 5478)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
DHD12N10 DONGHAI Transistor N-Channel MOSFET; 100V; 20V; 110mOhm; 12A; 28W; -55°C ~ 175°C; Similar to: IRLR120NPBF, IRLR120NTRPBF, IRLR120NTRLPBF
DHD12N10 DONGHAI TO252 (DPACK)
  N-MOSFET 100V 20V 110mOhm 12A 28W SMD -55°C ~ 175°C TO252 (DPACK) Donghai
 
Item available on a request
                     
F10N60 DONGHAI Transistor N-Channel MOSFET; 600V; 30V; 900mOhm; 10A; 40W; -55°C ~ 150°C; Similar to: STP10NK60ZFP
F10N60 DONGHAI TO220iso
  N-MOSFET 600V 30V 900mOhm 10A 40W THT -55°C ~ 150°C TO220iso Donghai
 
Item available on a request
                     
DI110N15PQ DComponents MOSFET, 150V, 110A, 56W transistors - fets, mosfets - single
DI110N15PQ DComponents  
 
 
Item available on a request
                     
DMC4050SSD-13 Trans MOSFET N/P-CH 40V 5.8A Automotive 8-Pin SO T/R
DMC4050SSD-13 SOP08
  N/P-MOSFET 40V 20V 60mOhm 5,8A 2,14W SMD -55°C ~ 150°C SOP08 DIODES
 
Item available on a request
                     
DMG1012UW SOT323 MOSFETs ROHS
DMG1012UW SOT323
 
 
Item available on a request
                     
DMN6140L-7 Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R
DMN6140L-7 SOT23
 
 
Item available on a request
                     
3415A Transistor MOSFET; SOT-23; P-Channel; YES ESD; -20V; -4A; 1.4W; -0.7V; ; 28mΩ AO3415A; DMP1045U
3415A SOT23
 
 
Item available on a request
                     
DMP2018LFK-7 Trans MOSFET P-CH 20V 9.2A Automotive 6-Pin UDFN EP T/R
DMP2018LFK-7 UDFN2523-6
  P-MOSFET 20V 12V 25mOhm 9,2A 2,1W SMD -55°C ~ 150°C UDFN2523-6 DIODES
 
Item available on a request
                     
DMP2305U SOT-23 MOSFETs ROHS
DMP2305U SOT23
 
 
Item available on a request
                     
3401 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -30V; -4.2A; 1W; -0.8v; 39mΩ; 44mΩ DMP3056L; AO3406; G3401L SOT23-3L GOFORD
3401 SOT23
 
 
Item available on a request
                     
G35P04D5 Transistor MOSFET; DFN5*6-8L; P-Channel; NO ESD; -40V; -35A; 35W; -1.5V; 11mΩ; 15mΩ DMP4015SPSQ;
G35P04D5 DFN08(5x6)
 
 
Item available on a request
                     
DMP4051LK3-13 P-MOSFET 40V 7.2A 51mΩ 2.14W
DMP4051LK3-13 TO252
 
 
Item available on a request
                     
GT090N06S Transistor MOSFET; SOP-8; N-Channel; NO ESD; 60V; 14A; 3.1W; 1.6V; 6.5mΩ; 8.5mΩ DMT4008LSS-13; AO4484; G13N04 GOFORD
GT090N06S SOP08
 
 
Item available on a request
                     
G30N04D3 Transistor MOSFET; DFN3*3-8L; N-Channel; NO ESD; 40V; 30A; 50W; 1.8V; 6.5mΩ; 8mΩ DMTH48M3SFVW; DMT4011LFG
G30N04D3 DFN08(3x3)
 
 
Item available on a request
                     
DN2450N8-G Microchip N-MOSFET 500V 230mA 10Ω 1.6W
DN2450N8-G Microchip SOT89
  N-MOSFET 500V 500V 20V 10Ohm 230mA 1,6W SMD -55°C ~ 150°C SOT89 MICROCHIP
 
Item available on a request
                     
FDA20N50_F109 N-MOSFET 22A 500V 280W 0.23Ω
FDA20N50_F109 TO 3P
  N-MOSFET 500V 30V 230mOhm 22A 280W THT -55°C ~ 150°C TO 3P Fairchild
 
Item available on a request
                     
FDA50N50 N-MOSFET 48A 500V 625W 0.105Ω
FDA50N50 TO 3P
  N-MOSFET 500V 20V 105mOhm 48A 625W THT -55°C ~ 150°C TO 3P ON SEMICONDUCTOR
 
Item available on a request
                     
FDC6420C SSOT6 TECH PUBLIC Transistor N/P-Channel MOSFET; 20V; 12V; 106mOhm/184mOhm; 3A/2,2A; 960mW; -55°C
FDC6420C SSOT6 TECH PUBLIC SSOT6L
 
 
Item available on a request
                     
FDD3682 N-MOSFET 32A 100V 95mW 0.032Ω
FDD3682 TO252
  N-MOSFET 100V 20V 90mOhm 32A 95W SMD -55°C ~ 175°C TO252 Fairchild
 
Item available on a request
                     
18N10 Transistor MOSFET; TO-252; N-Channel; NO ESD; 100V; 25A; 62.5W; 2V; 37mΩ; 42mΩ FDD3690
18N10 TO252
 
 
Item available on a request
                     
FDD5612 ON Semiconductor N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
FDD5612 ON Semiconductor DPAK
  N-MOSFET 60V 20V 103mOhm 18A 42W SMD -55°C ~ 175°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD6N25TM ON Semicondutor N-Channel 250V 4.4A (Tc) 50W (Tc) Surface Mount D-Pak
FDD6N25TM ON Semicondutor DPAK
  N-MOSFET 250V 30V 1,1Ohm 4,4A 50W SMD -55°C ~ 150°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD8424H ON Semiconductor Mosfet Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount TO-252-4L
FDD8424H ON Semiconductor DPAK
  N/P-MOSFET 40V 20V 80mOhm 26A 35W SMD -55°C ~ 150°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDD8896 ON Semiconductor N-Channel 30V 17A (Ta), 94A (Tc) 80W (Tc) Surface Mount TO-252AA
FDD8896 ON Semiconductor DPAK
  N-MOSFET 30V 20V 9,2mOhm 94A 80W SMD -55°C ~ 175°C DPAK ON SEMICONDUCTOR
 
Item available on a request
                     
FDG6303N Mosfet Array 2 N-Channel (Dual) 25V 500mA 300mW Surface Mount SC-88 (SC-70-6)
FDG6303N SC70-6
 
 
Item available on a request
                     
FDG6308P Trans MOSFET P-CH 20V 0.6A 6-Pin SC-70 T/R ONSEMI
FDG6308P SC70-6
 
 
Item available on a request
                     
FDG6308P-P SOT-363 MOSFETs ROHS
FDG6308P-P SOT363
 
 
Item available on a request
                     
FDG6321C Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R ONSEMI
FDG6321C SC70-6
 
 
Item available on a request
                     
FDG6335N Trans MOSFET N-CH 20V 0.7A 6-Pin SC-70 T/R ONSEMI
FDG6335N SC70-6
 
 
Item available on a request
                     
GT700P08T Transistor MOSFET; TO-220; P-Channel; NO ESD; -80V; -25A; 125W; -2.5V; 58mΩ; FDMC86139P;
GT700P08T TO220
 
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.