Unipolar Transistors (results: 5478)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
G45P40T Transistor MOSFET; TO-220; P-Channel; NO ESD; -40V; -45A; 80W; ; -1.5V; 10.5mΩ; 15mΩ IRF5305;
G45P40T TO220
 
 
Item available on a request
                     
IRF530N JSMICRO Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
IRF530N JSMICRO TO220
  N-MOSFET 100V 20V 38mOhm 33A 110W THT -55°C ~ 150°C TO220 JSMICRO
 
Item available on a request
                     
IRF540N 100V 35A 25m?@10V,12A 70W 2.3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
IRF540N TO220
 
 
Item available on a request
                     
IRF6215 Trans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) TO-220AB
IRF6215 TO220
 
 
Item available on a request
                     
IRF6218S Transistor P-Channel MOSFET; 150V; 20V; 150mOhm; 27A; 250W; -55°C ~ 175°C; IRF6218SPBF, IRF6218STRLPBF
IRF6218S TO263 (D2PAK)
  P-MOSFET 150V 20V 150mOhm 27A 250W SMD -55°C ~ 175°C TO263 (D2PAK) International Rectifier
 
Item available on a request
                     
IRF7103TR UMW Transistor 2xN-Channel MOSFET; 50V; 20V; 40mOhm; 3A; 2W; -55°C ~ 150°C; Equivalent: IRF7103PBF; IRF7103TRPBF; SP001563458; SP001562004;
IRF7103TR UMW SOP08
  2xN-MOSFET 50V 20V 40mOhm 3A 2W SMD -55°C ~ 150°C SOP08 UMW
 
Item available on a request
                     
IRF7103TRPBF SOIC8 TECH PUBLIC SOP08
 
 
Item available on a request
                     
IRF7103TR-VB SOP8 VBsemi Elec SOP08
 
 
Item available on a request
                     
IRF7204TR UMW Transistor P-Channel MOSFET; 30V; 20V; 90mOhm; 5,1A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7204PBF; IRF7204TRPBF; SP001574762; SP001551198;
IRF7204TR UMW SOP08
  P-MOSFET 30V 20V 90mOhm 5,1A 2,5W SMD -55°C ~ 150°C SOP08 UMW
 
Item available on a request
                     
IRF7204 smd P-MOSFET 5.3A 20V 2.5W 0.06Ω
IRF7204 smd SOP08
  P-MOSFET 20V 12V 100mOhm 5,3A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
IRF7204TR 20V 13A 15mOhm@4.5V,13A P Channel SOP-8-4.0mm MOSFETs IRF7204TR-VB;
IRF7204TR SOP08
 
 
Item available on a request
                     
IRF7210 P-MOSFET -16A -12V 0.007Ω
IRF7210 SOP08
  P-MOSFET 12V 12V 10mOhm 16A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
G13P04S Transistor MOSFET; SOP-8; P-Channel; NO ESD; -40V; -13A; 3W; -1.8V; 13mΩ IRF7240TRPBF; DMP4025LK3Q
G13P04S SOP08
 
 
Item available on a request
                     
IRF7304 Podobny do: IRF7304TR; IRF7304PBF; IRF7304TRPBF; IRF7304TRPBF-VB;
IRF7304 SOP08
 
 
Item available on a request
                     
IRF7307 N/P-MOSFET 5,2A/-4,3A +20V/-20V 2W 0.05/0.09Ω
IRF7307 SOP08
  2xN/P-MOSFET 20V 12V 140mOhm 5,2A 2W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
CJQ4953/SOP8 Transistor 2xP-Channel MOSFET; 30V; 20V; 98mOhm; 4,9A; 2W; -55°C ~ 150°C; Replacement: IRF7316TRPBF; IRF7316PBF-GURT; IRF7316; CJQ4953; CJQ4953/SOP8;
CJQ4953/SOP8 SOP08
 
 
Item available on a request
                     
IRF7380Q N-MOSFET HEXFET 3.6A 80V 2W 0.073Ω
IRF7380Q SOP08
  N-MOSFET 80V 20V 73mOhm 3,6A 2W SMD -55°C ~ 150°C SOP08 Infineon Technologies
 
Item available on a request
                     
G18P03S Transistor MOSFET; SOP-8; P-Channel; NO ESD; -30V; -15A; 3.1W; -1.6V; 8.1mΩ; 10.5mΩ IRF7425; AOSP21307
G18P03S SOP08
 
 
Item available on a request
                     
IRF7476 N-MOSFET HEXFET 15A 12V 2.5W 0.008Ω
IRF7476 SOP08
  N-MOSFET 12V 12V 30mOhm 15A 2,5W SMD -55°C ~ 150°C SOP08 Infineon (IRF)
 
Item available on a request
                     
IRF7507TR MICRO8 N/P-MOSFET HEXFET 2.4A, 1.7A 20V 1.25W 0.14Ω
IRF7507TR MICRO8 MICRO8
  N/P-MOSFET
 
Item available on a request
                     
IRF7580MTRPBF Trans MOSFET N-CH 60V 114A 10-Pin Direct-FET ME
IRF7580MTRPBF DirectFET
 
 
Item available on a request
                     
IRF820 TO220 LGE N-MOSFET 3A 500V 50W 3Ω
IRF820 TO220 LGE TO220
  N-MOSFET 500V 20V 3Ohm 2,5A 50W THT -55°C ~ 150°C TO220 LGE
 
Item available on a request
                     
IRF9310 P-MOSFET 30V 20A 2.5W
IRF9310 SOP08
  P-MOSFET 30V 20V 6,8mOhm 20A 2,5W SMD -55°C ~ 150°C SOP08 Infineon Technologies
 
Item available on a request
                     
IRF9310 Transistor P-Channel MOSFET; 30V; 20A; 2,8Ohm; 20V; 2,5W; -55°C~150°C; Substitute: IRF9310TR UMW; IRF9310TRPBF&-9-VB VBSEMI; AS30P15S;
IRF9310 SOP08
  P-MOSFET 30V 10V 20V 2,8Ohm 20A 2,5W SMD -55°C ~ 150°C SOP08 UMW
 
Item available on a request
                     
IRF9510SPBF P-MOSFET 4A 100V IRF9510SPBF IRF9510STRRPBF IRF9510STRLPBF
IRF9510SPBF D2PAK
  P-MOSFET 100V 20V 1,2Ohm 4A 43W SMD -55°C ~ 175°C D2PAK VISHAY
 
Item available on a request
                     
IRFB20N50KPBF Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
IRFB20N50KPBF TO220
  N-MOSFET 500V 30V 250mOhm 20A 280W THT -55°C ~ 150°C TO220 VISHAY
 
Item available on a request
                     
IRFB23N15DPBF Infineon Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB
IRFB23N15DPBF Infineon TO220AB
  N-MOSFET 150V 30V 90mOhm 23A 136W THT -55°C ~ 175°C TO220AB Infineon (IRF)
 
Item available on a request
                     
IRFB3256PBF Trans MOSFET N-CH 60V 206A 3-Pin(3+Tab) TO-220AB Tube
IRFB3256PBF TO220
  N-MOSFET 60V 20V 3,4mOhm 206A 300W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFB41N15D N-MOSFET 41A 150V 200W 0.045Ω
IRFB41N15D TO220
  N-MOSFET 150V 30V 45mOhm 41A 200W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFHM9331 Infineon P-MOSFET 30V 14,6mΩ 2.8W IRFM9331TRPBF
IRFHM9331 Infineon PQFN08 (6x5mm)
  P-MOSFET 30V 25V 10mOhm 11A 2,8W SMD -55°C ~ 150°C PQFN08 (6x5mm) Infineon (IRF)
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.