Unipolar Transistors (results: 5478)
Product | Cart |
Transistor type
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Max. drain-source voltage
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Max. drain-gate voltage
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Max. gate-source Voltage
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Open channel resistance
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Max. drain current
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Max. power loss
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Mounting
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Operating temperature (range)
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Case
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Manufacturer
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IRFI4410ZPBF Infineon
N-MOSFET 100V 43A 47W
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N-MOSFET | 100V | 30V | 9,3mOhm | 43A | 47W | THT | -55°C ~ 175°C | TO220FP | Infineon (IRF) | ||||
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Item available on a request
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IRFI4510GPBF Infineon
N-MOSFET 100V 35A 42W
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N-MOSFET | 100V | 20V | 13,5mOhm | 35A | 42W | THT | -55°C ~ 175°C | TO220 | Infineon (IRF) | ||||
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Item available on a request
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IRFIZ48NPBF Infineon
N-MOSFET 55V 40A 54W
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N-MOSFET | 55V | 20V | 16mOhm | 40A | 54W | THT | -55°C ~ 175°C | TO220FP | Infineon (IRF) | ||||
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Item available on a request
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IRFL9110
Tranzystor P-Channel MOSFET; 100V; 20V; 1,2Ohm; 1,1A; 3,1W; -55°C ~ 150°C; Odpowiednik: IRFL9110TRPBF; IRFL9110PBF-GURT; IRFL9110TRPBF-BE3;
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Item available on a request
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Item available on a request
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IRFP4410ZPBF
Transistor N-MOSFET; 100V; 20V; 9mOhm; 97A; 230W; -55°C ~ 175°C; Substitute: IRFP4410ZPBF; IRFP4410Z;
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N-MOSFET | 100V | 20V | 9mOhm | 97A | 230W | THT | -55°C ~ 175°C | TO247 | Infineon (IRF) | ||||
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Item available on a request
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IRFP4710
Tranzystor N-MOSFET; 100V; 20V; 14mOhm; 72A; 190W; -55°C ~ 175°C; Odpowiednik: IRFP4710PBF;
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N-MOSFET | 100V | 20V | 14mOhm | 72A | 190W | THT | -55°C ~ 175°C | TO247 | International Rectifier | ||||
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Item available on a request
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IRFPS37N50A SUPER247
N-MOSFET 36A 500V 446W 0.13Ω
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N-MOSFET | 500V | 30V | 130mOhm | 36A | 446W | THT | -55°C ~ 150°C | SUPER-247 | VISHAY | ||||
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Item available on a request
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IRFR024N
Transistor N-Channel MOSFET; 60V; 20V; 33mOhm; 25A; 50W; -55°C~175°C;
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N-MOSFET | 60V | 20V | 33mOhm | 25A | 50W | SMD | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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IRFR13N20DTRPBF
Transistor N-MOSFET; 200V; 30V; 235mOhm; 13A; 110W; -55°C ~ 175°C; Replacement: IRFR13N20DTRPBF; IRFR13N20DPBF; IRFR13N20D;
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N-MOSFET | 200V | 30V | 235mOhm | 13A | 110W | SMD | -55°C ~ 175°C | TO252 | Infineon (IRF) | ||||
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Item available on a request
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IRFR220NTR
Transistor N-MOSFET; 200V; 20V; 600mOhm; 5A; 43W; -55°C ~ 175°C; IRFR220NTRPBF;
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Item available on a request
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IRFR3607TRPBF
Tranzystor N-MOSFET; 75V; 20V; 9mOhm; 80A; 140W; -55°C ~ 175°C; Odpowiednik: IRFR3607TRPBF; IRFR3607PBF-GURT; IRFR3607PBF; IRFR3607TRPBF-VB;
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Item available on a request
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IRFR3707Z
N-MOSFET 56A 30V 50W
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N-MOSFET | 30V | 20V | 9,5Ohm | 56A | 50W | SMD | -55°C ~ 175°C | TO252 (DPACK) | International Rectifier | ||||
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Item available on a request
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IRFR3710Z TO252(DPAK) RoHS
IRFR3710ZTR-VB; IRFR3710ZTRLPBF; IRFR3710ZTRPBF; IRFR3710ZTRPBF-VB;
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Item available on a request
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IRFR3910
Transistor N-MOSFET; 100V; 20V; 115mOhm; 16A; 79W; -55°C ~ 175°C; Substitute: IRFR3910TRPBF; IRFR3910PBF; IRFR3910TRLPBF; IRFR3910PBF-GURT
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Item available on a request
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IRFR3910
Transistor N-Channel MOSFET; 100V; 20V; 100mOhm; 14,7A; 34,7W; -55°C~150°C;
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N-MOSFET | 100V | 20V | 100mOhm | 14,5A | 34,7W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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IRFR5410 smd
Tranzystor P-Channel MOSFET; 100V; 20V; 205mOhm; 13A; 66W; -55°C ~ 150°C; Odpowiednik: IRFR5410TRPBF; IRFR5410TRLPBF; IRFR5410PBF; IRFR5410PBF-GURT
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Item available on a request
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IRFR5505
Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 8,5A; 60W; -55°C~175°C;
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P-MOSFET | 60V | 20V | 110mOhm | 8,5A | 60W | THT | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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G2K8P15K
Transistor MOSFET; TO-252; P-Channel; NO ESD; -150V; -12A; 59W; -2.2V; 271mΩ IRFR6215;
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Item available on a request
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IRFR7546
Transistor N-Channel MOSFET; 60V; 20V; 8,5mOhm; 71A; 99W; -55°C ~ 175°C; Substitute: IRFR7546PBF; IRFR7546TRPBF; IRFR7546PBF-GURT;
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Item available on a request
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IRFR8314TRPBF
Trans MOSFET N-CH Si 30V 179A 3-Pin(2+Tab) DPAK T/R
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Item available on a request
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IRFR9014
Transistor P-Channel MOSFET; 60V; 20V; 59mOhm; 13A; 60W; -55°C~175°C;
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P-MOSFET | 60V | 20V | 110mOhm | 13A | 60W | THT | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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CJU12P10/TO-252-2L
Transistor P-MOSFET; 55V; 20V; 175mOhm; 11A; 38W; -55°C ~ 150°C; Substitute: IRFR9024NTRPBF;
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Item available on a request
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IRFR9024N
Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 13A; 60W; -55°C~150°C;
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P-MOSFET | 60V | 20V | 110mOhm | 13A | 60W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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IRFR9024NTRPBF
TO-252 MOSFETs ROHS
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Item available on a request
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TPIRFR9024TRPBF
Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 8,5A; 60W; -55°C~175°C;
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P-MOSFET | 60V | 20V | 110mOhm | 8,5A | 60W | THT | -55°C ~ 175°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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IRFR9120N
Transistor P-Channel MOSFET; 100V; 20V; 210mOhm; 13A; 66W; -55°C~150°C;
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P-MOSFET | 100V | 20V | 110mOhm | 13A | 66W | THT | -55°C ~ 150°C | TO252 | TECH PUBLIC | ||||
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Item available on a request
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IRFS4410
N-MOSFET 96A 100V 250W 0.008Ω
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N-MOSFET | 100V | 20V | 10mOhm | 96A | 250W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | Infineon (IRF) | ||||
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Item available on a request
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GT080N10M
Transistor MOSFET; TO-263; N-Channel; NO ESD; 100V; 70A; 100W; 2V; 6mΩ; 9mΩ SUM60N10-17; IRFS4510PbF
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Item available on a request
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IRFS4610
N-MOSFET 100V 73A 190W
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N-MOSFET | 100V | 20V | 14mOhm | 73A | 190W | SMD | -55°C ~ 175°C | TO263 (D2PAK) | International Rectifier | ||||
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Item available on a request
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Field effect transistors for analog and digital circuits
At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.
How are field effect transistors constructed?
Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:
- Crystal
- First electrode
- Second electrode
- Gate
Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.
How do field effect transistors work?
It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.
Field effect transistors catalogue - what is the choice?
Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:
- P-FET
- J-FET
- MOSFET
Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit.
Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.