Unipolar Transistors (results: 5478)

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Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
IRFI4410ZPBF Infineon N-MOSFET 100V 43A 47W
IRFI4410ZPBF Infineon TO220FP
  N-MOSFET 100V 30V 9,3mOhm 43A 47W THT -55°C ~ 175°C TO220FP Infineon (IRF)
 
Item available on a request
                     
IRFI4510GPBF Infineon N-MOSFET 100V 35A 42W
IRFI4510GPBF Infineon TO220
  N-MOSFET 100V 20V 13,5mOhm 35A 42W THT -55°C ~ 175°C TO220 Infineon (IRF)
 
Item available on a request
                     
IRFIZ48NPBF Infineon N-MOSFET 55V 40A 54W
IRFIZ48NPBF Infineon TO220FP
  N-MOSFET 55V 20V 16mOhm 40A 54W THT -55°C ~ 175°C TO220FP Infineon (IRF)
 
Item available on a request
                     
IRFL9110 Tranzystor P-Channel MOSFET; 100V; 20V; 1,2Ohm; 1,1A; 3,1W; -55°C ~ 150°C; Odpowiednik: IRFL9110TRPBF; IRFL9110PBF-GURT; IRFL9110TRPBF-BE3;
IRFL9110 SOT223
 
 
Item available on a request
                     
IRFP064N TO247
 
 
Item available on a request
                     
IRFP4410ZPBF Transistor N-MOSFET; 100V; 20V; 9mOhm; 97A; 230W; -55°C ~ 175°C; Substitute: IRFP4410ZPBF; IRFP4410Z;
IRFP4410ZPBF TO247
  N-MOSFET 100V 20V 9mOhm 97A 230W THT -55°C ~ 175°C TO247 Infineon (IRF)
 
Item available on a request
                     
IRFP4710 Tranzystor N-MOSFET; 100V; 20V; 14mOhm; 72A; 190W; -55°C ~ 175°C; Odpowiednik: IRFP4710PBF;
IRFP4710 TO247
  N-MOSFET 100V 20V 14mOhm 72A 190W THT -55°C ~ 175°C TO247 International Rectifier
 
Item available on a request
                     
IRFPS37N50A SUPER247 N-MOSFET 36A 500V 446W 0.13Ω
IRFPS37N50A SUPER247 SUPER-247
  N-MOSFET 500V 30V 130mOhm 36A 446W THT -55°C ~ 150°C SUPER-247 VISHAY
 
Item available on a request
                     
IRFR024N Transistor N-Channel MOSFET; 60V; 20V; 33mOhm; 25A; 50W; -55°C~175°C;
IRFR024N TO252
  N-MOSFET 60V 20V 33mOhm 25A 50W SMD -55°C ~ 175°C TO252 TECH PUBLIC
 
Item available on a request
                     
IRFR13N20DTRPBF Transistor N-MOSFET; 200V; 30V; 235mOhm; 13A; 110W; -55°C ~ 175°C; Replacement: IRFR13N20DTRPBF; IRFR13N20DPBF; IRFR13N20D;
IRFR13N20DTRPBF TO252
  N-MOSFET 200V 30V 235mOhm 13A 110W SMD -55°C ~ 175°C TO252 Infineon (IRF)
 
Item available on a request
                     
IRFR220NTR Transistor N-MOSFET; 200V; 20V; 600mOhm; 5A; 43W; -55°C ~ 175°C; IRFR220NTRPBF;
IRFR220NTR TO252
 
 
Item available on a request
                     
IRFR3607TRPBF Tranzystor N-MOSFET; 75V; 20V; 9mOhm; 80A; 140W; -55°C ~ 175°C; Odpowiednik: IRFR3607TRPBF; IRFR3607PBF-GURT; IRFR3607PBF; IRFR3607TRPBF-VB;
IRFR3607TRPBF TO252 (DPACK)
 
 
Item available on a request
                     
IRFR3707Z N-MOSFET 56A 30V 50W
IRFR3707Z TO252 (DPACK)
  N-MOSFET 30V 20V 9,5Ohm 56A 50W SMD -55°C ~ 175°C TO252 (DPACK) International Rectifier
 
Item available on a request
                     
IRFR3710Z TO252(DPAK) RoHS IRFR3710ZTR-VB; IRFR3710ZTRLPBF; IRFR3710ZTRPBF; IRFR3710ZTRPBF-VB;
IRFR3710Z TO252(DPAK) RoHS DPAK
 
 
Item available on a request
                     
IRFR3910 Transistor N-MOSFET; 100V; 20V; 115mOhm; 16A; 79W; -55°C ~ 175°C; Substitute: IRFR3910TRPBF; IRFR3910PBF; IRFR3910TRLPBF; IRFR3910PBF-GURT
IRFR3910 TO252 (DPACK)
 
 
Item available on a request
                     
IRFR3910 Transistor N-Channel MOSFET; 100V; 20V; 100mOhm; 14,7A; 34,7W; -55°C~150°C;
IRFR3910 TO252
  N-MOSFET 100V 20V 100mOhm 14,5A 34,7W THT -55°C ~ 150°C TO252 TECH PUBLIC
 
Item available on a request
                     
IRFR5410 smd Tranzystor P-Channel MOSFET; 100V; 20V; 205mOhm; 13A; 66W; -55°C ~ 150°C; Odpowiednik: IRFR5410TRPBF; IRFR5410TRLPBF; IRFR5410PBF; IRFR5410PBF-GURT
IRFR5410 smd TO252 (DPACK)
 
 
Item available on a request
                     
IRFR5505 Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 8,5A; 60W; -55°C~175°C;
IRFR5505 TO252
  P-MOSFET 60V 20V 110mOhm 8,5A 60W THT -55°C ~ 175°C TO252 TECH PUBLIC
 
Item available on a request
                     
G2K8P15K Transistor MOSFET; TO-252; P-Channel; NO ESD; -150V; -12A; 59W; -2.2V; 271mΩ IRFR6215;
G2K8P15K TO252
 
 
Item available on a request
                     
IRFR7546 Transistor N-Channel MOSFET; 60V; 20V; 8,5mOhm; 71A; 99W; -55°C ~ 175°C; Substitute: IRFR7546PBF; IRFR7546TRPBF; IRFR7546PBF-GURT;
IRFR7546 TO252 (DPACK)
 
 
Item available on a request
                     
IRFR8314TRPBF Trans MOSFET N-CH Si 30V 179A 3-Pin(2+Tab) DPAK T/R
IRFR8314TRPBF TO252 (DPACK)
 
 
Item available on a request
                     
IRFR9014 Transistor P-Channel MOSFET; 60V; 20V; 59mOhm; 13A; 60W; -55°C~175°C;
IRFR9014 TO252
  P-MOSFET 60V 20V 110mOhm 13A 60W THT -55°C ~ 175°C TO252 TECH PUBLIC
 
Item available on a request
                     
CJU12P10/TO-252-2L Transistor P-MOSFET; 55V; 20V; 175mOhm; 11A; 38W; -55°C ~ 150°C; Substitute: IRFR9024NTRPBF;
CJU12P10/TO-252-2L TO252
 
 
Item available on a request
                     
IRFR9024N Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 13A; 60W; -55°C~150°C;
IRFR9024N TO252
  P-MOSFET 60V 20V 110mOhm 13A 60W THT -55°C ~ 150°C TO252 TECH PUBLIC
 
Item available on a request
                     
IRFR9024NTRPBF TO-252 MOSFETs ROHS
IRFR9024NTRPBF TO252
 
 
Item available on a request
                     
TPIRFR9024TRPBF Transistor P-Channel MOSFET; 60V; 20V; 110mOhm; 8,5A; 60W; -55°C~175°C;
TPIRFR9024TRPBF TO252
  P-MOSFET 60V 20V 110mOhm 8,5A 60W THT -55°C ~ 175°C TO252 TECH PUBLIC
 
Item available on a request
                     
IRFR9120N Transistor P-Channel MOSFET; 100V; 20V; 210mOhm; 13A; 66W; -55°C~150°C;
IRFR9120N TO252
  P-MOSFET 100V 20V 110mOhm 13A 66W THT -55°C ~ 150°C TO252 TECH PUBLIC
 
Item available on a request
                     
IRFS4410 N-MOSFET 96A 100V 250W 0.008Ω
IRFS4410 TO263 (D2PAK)
  N-MOSFET 100V 20V 10mOhm 96A 250W SMD -55°C ~ 175°C TO263 (D2PAK) Infineon (IRF)
 
Item available on a request
                     
GT080N10M Transistor MOSFET; TO-263; N-Channel; NO ESD; 100V; 70A; 100W; 2V; 6mΩ; 9mΩ SUM60N10-17; IRFS4510PbF
GT080N10M TO263
 
 
Item available on a request
                     
IRFS4610 N-MOSFET 100V 73A 190W
IRFS4610 TO263 (D2PAK)
  N-MOSFET 100V 20V 14mOhm 73A 190W SMD -55°C ~ 175°C TO263 (D2PAK) International Rectifier
 
Item available on a request
                     
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Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.