Unipolar Transistors (results: 5478)

1    175  176  177  178  179  180  181  182  183    183
Product Cart
Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
NVBG015N065SC1 onsemi SIC MOS D2PAK-7L 650V Transistors - FETs, MOSFETs - Single
NVBG015N065SC1 onsemi  
 
 
Item available on a request
                     
NVD5C648NLT4G Trans MOSFET Single N-Channel Power; 60V; 18A; Automotive;
NVD5C648NLT4G DPAK
 
 
Item available on a request
                     
NVH4L015N065SC1 onsemi SIC MOS TO247-4L 650V Transistors - FETs, MOSFETs - Single
NVH4L015N065SC1 onsemi  
 
 
Item available on a request
                     
NVMFS6B14NLT1G Trans MOSFET N-CH 100V 11A Automotive 5-Pin(4+Tab) SO-FL
NVMFS6B14NLT1G DFN5
 
 
Item available on a request
                     
NVMFWS014P04M8LT1G P-Channel 40 V 12.5A (Ta), 52.1A (Tc) 3.6W (Ta), 60W (Tc) Surface Mount 5-DFN (5
NVMFWS014P04M8LT1G DFN5
 
 
Item available on a request
                     
NVTFS5116PLWFTAG Trans MOSFET P-CH 60V 6A Automotive 8-Pin WDFN EP
NVTFS5116PLWFTAG WDFN8(5x6)
 
 
Item available on a request
                     
NXH010P120MNF1PG onsemi PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
NXH010P120MNF1PG onsemi  
 
 
Item available on a request
                     
NXH010P120MNF1PNG onsemi PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
NXH010P120MNF1PNG onsemi  
 
 
Item available on a request
                     
NXH010P120MNF1PTNG onsemi PIM F1 SIC HALFBRIDGE 1200V 10MO Transistors - FETs, MOSFETs - Arrays
NXH010P120MNF1PTNG onsemi  
 
 
Item available on a request
                     
PD20015-E STMicroelectronics Trans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
PD20015-E  STMicroelectronics PowerSO-10
 
 
Item available on a request
                     
PJA3404_R1_00001 SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
PJA3404_R1_00001 SOT23
 
 
Item available on a request
                     
PJA3415A_R1_00001 SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
PJA3415A_R1_00001 SOT23
 
 
Item available on a request
                     
PJA3461_R1_00001 SOT-23, MOSFET Transistors - FETs, MOSFETs - Single
PJA3461_R1_00001 SOT-23 t/r
 
 
Item available on a request
                     
PMV30ENEAR PMV30ENEA/SOT23/TO-236AB Transistors - FETs, MOSFETs - Single
PMV30ENEAR TO236AB
 
 
Item available on a request
                     
PSMN2R4-30MLDX Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP PSMN2R4-30MLDX
PSMN2R4-30MLDX LFPAK
 
 
Item available on a request
                     
PSMN3R7-100BSE NEXPERIA Transistor MOSFET, TN-channel 100 V, 3.95 mOhm, D2PAK
PSMN3R7-100BSE NEXPERIA TO263 (D2PAK)
  N-MOSFET 100V 100V 20V 10,7mOhm 120A 405W SMD -55°C ~ 175°C TO263 (D2PAK) NXP
 
Item available on a request
                     
PSMN4R2-80YSEX Nexperia USA Inc. PSMN4R2-80YSE/SOT1023/4 LEADS Transistors - FETs, MOSFETs - Single
PSMN4R2-80YSEX Nexperia USA Inc. LFPAK56 (SOT669)
 
 
Item available on a request
                     
R6015KNX Rohm Semiconductor NCH 600V 15A POWER MOSFET TO-220-3 Full Pack
R6015KNX Rohm Semiconductor TO220FP
  N-MOSFET 600V 30V 290mOhm 15A 60W THT -55°C ~ 150°C TO220FP ROHM
 
Item available on a request
                     
RD01MUS2B-T113 Transistor Mitsubishi
RD01MUS2B-T113 SOT89
  N-MOSFET 25V 10V 600mA 3,6W SMD -40°C ~ 125°C SOT89 Mitsubishi Electric
 
Item available on a request
                     
RFD14N05L N-MOSFET 14A 50V 48W 0.1Ω
RFD14N05L TO251 (IPACK)
  N-MOSFET 50V 50V 10V 100mOhm 14A 48W THT -55°C ~ 175°C TO251 (IPACK) ON SEMICONDUCTOR
 
Item available on a request
                     
RQ3E100BNTB Rohm Semiconductor MOSFET N-CH 30V 10A HSMT8 8-PowerVDFN
RQ3E100BNTB Rohm Semiconductor HSMT8 (3.2x3)
 
 
Item available on a request
                     
RV8C010UNHZGG2CR 3-Pin DFN-W ROHM Trans MOSFET N-CH 20V 1A Automotive 3-Pin DFN-W
RV8C010UNHZGG2CR 3-Pin DFN-W ROHM SOT883
 
 
Item available on a request
                     
RV8L002SNHZGG2CR DFN1010-3W ROHM N-Channel 60 V 250mA (Ta) 1W (Ta) Surface Mount DFN1010-3W
RV8L002SNHZGG2CR DFN1010-3W ROHM DFN1010-3W
 
 
Item available on a request
                     
SI1330EDL-T1-E3 VISHAY Trans MOSFET N-CH 60V 0.24A 3-Pin SC-70
SI1330EDL-T1-E3 VISHAY SC70-3
 
 
Item available on a request
                     
SI1902DL-T1-E3 2N-MOSFET 20V 660mA 270mW
SI1902DL-T1-E3 SC70-6
  2xN-MOSFET 20V 12V 630mOhm 660mA 270mW SMD -55°C ~ 150°C SC70-6 VISHAY
 
Item available on a request
                     
SI2302A-TP N-Channel Enhancement Mode Field Effect Transistor
SI2302A-TP SOT23-3
 
 
Item available on a request
                     
KSI2302CDS-T1-GE3 KUU Tranzystor N-MOSFET; 20V; 10V; 59mOhm; 2,9A; 1W; -55°C ~ 150°C; KSI2302CDS-T1-GE3;
KSI2302CDS-T1-GE3 KUU SOT23
  N-MOSFET 20V 10V 59mOhm 2,9A 1W SMD -55°C ~ 150°C SOT23 KUU
 
Item available on a request
                     
G29 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -15V; -4.1A; 1.05W; -0.55V; ; 24mΩ SI2305-TP;
G29 SOT23
 
 
Item available on a request
                     
SI2306-TP Transistor N-Channel MOSFET; 30V; 20V; 65mOhm; 20A; 620mW; -55°C~150°C;
SI2306-TP SOT23
  N-MOSFET 30V 20V 65mOhm 20A 620mW SMD -55°C ~ 150°C SOT23 MCC
 
Item available on a request
                     
G05P06L Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Substitute: SI2309CDS-T1-GE3; SI2309CDS-T1-E3;
G05P06L SOT23
 
 
Item available on a request
                     
1    175  176  177  178  179  180  181  182  183    183

Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.