Unipolar Transistors (results: 5478)

1    175  176  177  178  179  180  181  182  183 
Product Cart
Transistor type
Max. drain-source voltage
Max. drain-gate voltage
Max. gate-source Voltage
Open channel resistance
Max. drain current
Max. power loss
Mounting
Operating temperature (range)
Case
Manufacturer
TK100E08N1,S1X(S Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220
TK100E08N1,S1X(S TO220
 
 
Item available on a request
                     
TK110P10PL,RQ(S2 Mosfet, N-ch, 100V, 40A, TO-252
TK110P10PL,RQ(S2 TO252
 
 
Item available on a request
                     
TK25E60X,S1X(S PWR-MOSFET N-CHANNEL
TK25E60X,S1X(S  
 
 
Item available on a request
                     
TK40E06N1,S1X(S Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220 Magazine
TK40E06N1,S1X(S TO220
 
 
Item available on a request
                     
TPC8124 SOP8 TOSHIBA Trans MOSFET P-CH Si 40V 12A 8-Pin SOP T/R TPC8124(TE12L,Q,M); TPC8124(TE12L,V); TPC8124(TE12L,V,M);
TPC8124 SOP8 TOSHIBA SOP08
 
 
Item available on a request
                     
TPH2R608NH,L1Q Trans MOSFET N-CH Si 75V 168A 8-Pin SOP Advance TPH2R608NH,L1Q(M
TPH2R608NH,L1Q SOP08
 
 
Item available on a request
                     
TSM1N60CP N-MOSFET 1A 600V 50W RDS=8 TSM1N60LCP
TSM1N60CP TO252 (DPACK)
  N-MOSFET 600V 30V 8Ohm 1A 50W SMD -55°C ~ 150°C TO252 (DPACK) TAI-SEM
 
Item available on a request
                     
TSM2301ACX RFG P-Ch 20V 2,8A 0,7W 0,13R SOT23 TSM2301ACX ; TSM2301ACX RFG ; TSM2301ACX RF-VB;
TSM2301ACX RFG SOT23
 
 
Item available on a request
                     
TSM2301CX Transistor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Substitute: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; LGE2301; TSM2301CX RF-VB;
TSM2301CX SOT23
                         
Item available on a request
                           
Item in delivery
Estimated time: 2025-05-20
Quantity of pieces: 3000
                     
TSM2302CX Transistor N-MOSFET; 20V; 12V; 55mOhm; 4A; 1,56W; -55°C ~ 125°C; Substitute:TSM2302CX RFG;
TSM2302CX SOT23
 
 
Item available on a request
                     
G2305 Transistor MOSFET; SOT-23; P-Channel; NO ESD; -20V; -4.8A; 1.7W; -0.7V; ; 45mΩ~52mΩ TSM650P02CXRFG;
G2305 SOT23
 
 
Item available on a request
                     
UT6K3TCR DFN2020-8 ROHM Transistor MOSFET Array Dual N-CH 30V 5.5A
UT6K3TCR DFN2020-8 ROHM DFN08
 
 
Item available on a request
                     
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech N-CH MOSFET 60V 3A SOT-23-3L Odpowiednik 03N06 (Goford), RHK003N06FRAT146 (Rohm); YJL03N06A IS EOL; REPLACEMENT: YJL03N06C
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech SOT23-3
 
 
Item available on a request
                     
ZXM61N02FTA SOT-23-3 MOSFETs ROHS
ZXM61N02FTA SOT23
 
 
Item available on a request
                     
ZXMS6008FFQ-7 N-Channel Self Protected Enhancement Mode Mosfet Automotive AEC-Q101
ZXMS6008FFQ-7  
 
 
Item available on a request
                     
AUIR3313S INTERNATIONAL RECTIFIER Power Switch Hi Side 7A AUIR3313STRL(800pcs/reel) ; AUIR3313S(50pcs/Tube)
AUIR3313S INTERNATIONAL RECTIFIER TO263/5(D2PAK)
  THT -40°C ~ 150°C TO263/5(D2PAK) International Rectifier
 
Item available on a request
                     
CJ3400S3 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
CJ3400S3 SOT23
 
 
Item available on a request
                     
IPG20N06S2L35ATMA1 Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP
IPG20N06S2L35ATMA1 TDSON-8
 
 
Item available on a request
                     
1    175  176  177  178  179  180  181  182  183 

Field effect transistors for analog and digital circuits

At the moment, transistors are an inseparable element of most of the electric and electronic devices. They are present both in analog and digital circuits. Among transistors, a special mention should be given to the field effect transistors, also called unipolar. It is worth noticing that the field effect transistors catalogue includes numerous elements which differ significantly from each other. It is worth taking a little closer look at what in fact field effect transistors are and how they work.

How are field effect transistors constructed?

Despite the fact that discussed elements are not uniform, some features are common for them and distinguish them from other transistors. Thus field effect transistor consist of four main parts, which are:

  • Crystal
  • First electrode
  • Second electrode
  • Gate

Crystal is the main part of a field effect transistor. It serves as a doped semiconductor. Thanks to the crystal properties, unipolar transistors work by using the electromagnetic field. It is not possible in case of bipolar transistors, in which the base is weakly doped. When it comes to the field effect transistors, the S symbol represents the first electrode which corresponds to the emitter in bipolar models. In bipolar transistors, the first electrode is defined as a source. However the second electrode is a drain marked with the D letter, the drain serves the same function as collectors in bipolar transistors. Another very important part of every transistor is also a gate, that is the third electrode. It is situated in a channel between the source and drain. This part serves the same function as a base, being an inseparable part of every bipolar transistor.

How do field effect transistors work?

It is worth taking a little closer look at transistors mechanisms of action in order to explain where their popularity came from. Due to implementation of the crystal, the field effect transistor is able to serve its function by using electromagnetic field. Whatsmore, current in this type of transistor does not flow through the gate. In a so-called gate, that is a base, an electromagnetic field is produced due to putting mentioned crystal. However, thanks to the created electromagnetic field, a change of the channel cross-section takes place. No inflow and outflow of the current from the gate guarantees high value of the input resistance. It is a very valuable feature, especially in analog applications of the field effect transistors.

Field effect transistors catalogue - what is the choice? 

Various field effect transistors can be found in our offer, both for analog and digital devices. Among others, our field effect transistors catalogue includes:

  • P-FET
  • J-FET
  • MOSFET

Although field effect transistors are diverse, which can be seen in our offer, one group of them is valued especially high. Namely the MOSFET (Metal-oxide-semiconductor field-effect transistor) group. They are diverse models which in fact have certain common features that distinguish them among other types of devices. When it comes to the MOSFET transistors, our catalogue includes models with especially high quality of operation. Whatsmore, the ability to connect them with each other is what distinguishes this type of device. Thanks to this combination, the outcome is a very complicated integrated circuit. 

 

Classic MOSFET transistors can be used in analog devices, e.g. as a switch. However the popularity of transistors from this group primarily results from the ability to use them in the most technologically advanced digital circuits. The MOSFET transistors catalogue includes models designed to application in microprocessors, or CMOS gates.