Transistors (results: 8525)

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Open channel resistance
Max. drain current
Max. power loss
Case
Manufacturer
Power dissipation
Current gain factor
Cutoff frequency
Gate charge
Max. dissipated power
Max. drain-source voltage
Max. collector current
Max collector-emmiter voltage
Max. collector current
Max collector current (impulse)
Forvard volatge [Vgeth]
Transistor type
Max. drain-gate voltage
Operating temperature (range)
Max. gate-source Voltage
Collector-emitter voltage
Mounting
Gate-emitter voltage
Transistor circuits [Y/N]
TIP147T TO220C SPTECH Transistor PNP; Bipolar; 100V; 5V; 750; 8A; 60W; -55°C~150°C;
TIP147T TO220C SPTECH TO220
  TO220 SPTECH 60W 750 8A 100V PNP -55°C ~ 150°C
 
Item available on a request
                                               
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech N-CH MOSFET 60V 3A SOT-23-3L Odpowiednik 03N06 (Goford), RHK003N06FRAT146 (Rohm); YJL03N06A IS EOL; REPLACEMENT: YJL03N06C
YJL03N06A-F2-0000HF Yangzhou Yangjie Elec Tech SOT23-3
 
 
Item available on a request
                                               
STGW60V60F STMicroelectronics Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
STGW60V60F  STMicroelectronics TO247
 
 
Item available on a request
                                               
ZXM61N02FTA SOT-23-3 MOSFETs ROHS
ZXM61N02FTA SOT23
 
 
Item available on a request
                                               
TIP35C Tranzystor NPN; 50; 125W; 100V; 25A; 3MHz; -65°C ~ 150°C; Odpowiednik: BD249C; TIP35CG;
TIP35C TO247
 
 
Item available on a request
                                               
TIP36C JSMICRO Transistor PNP; 75; 125W; 100V; 25A; 3MHz; -65°C ~ 150°C; Equivalent: TIP36C-ST; TIP36C-S; TIP36CG;
TIP36C JSMICRO TO247
  TO247 JSMICRO 125W 50 3MHz 25A 100V PNP -65°C ~ 150°C
 
Item available on a request
                                               
TIP36C Tranzystor PNP; 50; 125W; 100V; 25A; 3MHz; -65°C ~ 150°C; Odpowiednik: BD250C; TIP36CG; TIP36C-E;
TIP36C TO247
 
 
Item available on a request
                                               
ZXMS6008FFQ-7 N-Channel Self Protected Enhancement Mode Mosfet Automotive AEC-Q101
ZXMS6008FFQ-7  
 
 
Item available on a request
                                               
AUIR3313S INTERNATIONAL RECTIFIER Power Switch Hi Side 7A AUIR3313STRL(800pcs/reel) ; AUIR3313S(50pcs/Tube)
AUIR3313S INTERNATIONAL RECTIFIER TO263/5(D2PAK)
  TO263/5(D2PAK) International Rectifier -40°C ~ 150°C THT
 
Item available on a request
                                               
TIP41C TO220 KEXIN Tranzystor NPN; 75; 65W; 100V; 6A; 3MHz; -65°C ~ 150°C; Odpowiednik: 2SD843; 2SD569; 2SD568; 2SC2334; 2SD613; TIP41C-LGE;
TIP41C TO220 KEXIN TO220
 
 
Item available on a request
                                               
TIP42CF TO-220F JSCJ Tranzystor PNP; Bipolar; 75; 65W; 100V; 6A; 3MHz; -55°C ~ 150°C;
TIP42CF TO-220F JSCJ TO220FP
  TO220FP CJ 65W 75 3MHz 6A 100V PNP -55°C ~ 150°C
 
Item available on a request
                                               
CJ3400S3 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
CJ3400S3 SOT23
 
 
Item available on a request
                                               
IPG20N06S2L35ATMA1 Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP
IPG20N06S2L35ATMA1 TDSON-8
 
 
Item available on a request
                                               
TTA006B,Q(S TOSHIBA Power Transistor PNP 230V 1A 70MHz 3-Pin TO-126N
TTA006B,Q(S TOSHIBA TO126
 
 
Item available on a request
                                               
PDTD114ETR NEXPERIA Trans Digital BJT NPN 50V 500mA Automotive 3-Pin TO-236AB T/R PDTD114ETR
PDTD114ETR NEXPERIA  
 
 
Item available on a request
                                               
YFW10N65AF TO-220F YFW ODPOWIEDNIK: BXP10N65CF;
YFW10N65AF TO-220F YFW TO220F
 
 
Item available on a request
                                               
YFW13N50AF TO220F YFW Odpowiednik: BXP18N50F; LGE18N50F; YFW13N50AF;
YFW13N50AF TO220F YFW TO220F
 
 
Item available on a request
                                               
YFW18N20AC TO-220C YFW TO220
 
 
Item available on a request
                                               
TO220F
 
 
Item available on a request
                                               
YFW2N65AD TO252 YFW Odpowiednik: BXP2N65D; LGE2N65D; YFW2N65AD;
YFW2N65AD TO252 YFW TO252
 
 
Item available on a request
                                               
YFW2N65AMJ TO251 YFW Odpowiednik: BXP2N65U; LGE2N65U; YFW2N65AMJ;
YFW2N65AMJ TO251 YFW TO251 (IPACK)
 
 
Item available on a request
                                               
YFW4N65AD TO252 YFW LGE4N65D; YFW4N65AD; BXP4N65D;
YFW4N65AD TO252 YFW TO252
 
 
Item available on a request
                                               
YFW4N65AF TO220F YFW YFW4N65AF; LGE4N65F; BXP4N65F;
YFW4N65AF TO220F YFW TO220F
 
 
Item available on a request
                                               
YFW4N65AMJ TO-251S YFW ODPOWIEDNIK: BXP4N65U;
YFW4N65AMJ TO-251S YFW TO251 (IPACK)
 
 
Item available on a request
                                               
YFW7N65AF TO-220F YFW ODPOWIEDNIK: BXP7N65CF;
YFW7N65AF TO-220F YFW TO220F
 
 
Item available on a request
                                               
YFW7N65AT TO-220AB YFW ODPOWIEDNIK: BXP7N65P;
YFW7N65AT TO-220AB YFW TO220
 
 
Item available on a request
                                               
ZTX458 NPN 0.3A 400V 1W 50MHz
ZTX458 TO92
  50MHz NPN
 
Item available on a request
                                               
BGH75N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
BGH75N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH75N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 338W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N120HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
BGH75N120HF1 BASiC SEMICONDUCTOR Rys.TBGH75N120HF1
  TO247-3 BASiC SEMICONDUCTOR 398nC 568W 75A 200A 4,2V ~ 5,8V -40°C ~ 150°C 1200V THT 20V
 
Item available on a request
                                               
BGH50N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
BGH50N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH50N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
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Transistors

Field effect, bipolar and IGBT transistors - all those three types can be found in the Micros store. Get acquainted with the usage of transistors and what are the differences between particular types. Please check why it is worth choosing products offered by us.

What is a transistor and what is it used for?

Transistor is a semiconductor that has the capability of amplifying the electric signal.

The device is characterised by small size, hence it replaced vacuum tubes used before. It is believed that one of the main factors for the electronic development acceleration in the recent decades was introducing transistors to the market. It was possible thanks to the capability of significantly amplifying the signal by using small and not so complicated elements. However, why in fact it turned out to be that important and what are the uses of transistors in present day electronics? Here are few examples:

  • It is the most important part of amplifiers; 
  • It is used as a structural element in semiconductor memory;
  • It takes part in a signal transmission, e.g. in phase shift modules and generators;

Types of transistors

It is hard to answer the question “What are transistors used for?” without explaining what are the differences between them. In Micros offer you will find every transistor that you might need. Our offer includes devices with a variety of applications, because our aim is to meet the needs of every customer. When it comes to transistors, we can distinguish three main types, and dozens of devices from each type can be found in the relevant product category in our store. The three main types are:

  • Field effect transistors
  • Bipolar transistors
  • IGBT transistors

We can assume that the field effect transistors are the most classic version of transistors. This invention is nearly 100 years old, however it is still incredibly useful. FET(Field Effect Transistor) consists of one semiconductor layer and the current is controlled by using the electromagnetic field.

Bipolar transistors, which are also available in our offer, are made up of three semiconductor layers, and each one of them represents a different type of semiconductivity. IGBT transistors on the other hand are a variety of bipolar transistors equipped with additional insulated gate.

Transistors in our offer

Our offer includes transistors with a vast variety of applications. We provide numerous FET models, called unipolar, which are essential parts of integrated circuits or switches. If you need parts for current amplifiers, choose our bipolar transistors. Moreover, essential parts for photovoltaic installations can be found in the “IGBT Transistors” category.

Our products come from proven manufacturers. Among our transistor suppliers you will find such brands as: NXP, Hottech, Infineon or Born. Each transistor is checked before being admitted to trading. These steps are taken in order to be sure that the client will receive a qualitative and fully functioning device.