Transistors (results: 8635)

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Open channel resistance
Max. drain current
Max. power loss
Case
Manufacturer
Power dissipation
Current gain factor
Cutoff frequency
Gate charge
Max. dissipated power
Max. drain-source voltage
Max. collector current
Max collector-emmiter voltage
Max. collector current
Max collector current (impulse)
Forvard volatge [Vgeth]
Transistor type
Max. drain-gate voltage
Operating temperature (range)
Max. gate-source Voltage
Collector-emitter voltage
Mounting
Gate-emitter voltage
Transistor circuits [Y/N]
TIP42CF TO-220F JSCJ Tranzystor PNP; Bipolar; 75; 65W; 100V; 6A; 3MHz; -55°C ~ 150°C;
Micros part number: TTIP42c TO220F Info
Datasheet
Technical drawing Add to favourites
TIP42CF TO-220F JSCJ TO220FP
                                                   
Item available on a request
TO220FP CJ 65W 75 3MHz 6A 100V PNP -55°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2025-05-30
Quantity of pieces: 100
                                               
CJ3400S3 30V 6.5A 30m@10V,3.2A 1.7W 1.1V@250uA 17pF@15V N Channel 335pF@15V 2.1nC@4.5V -55~+150@(Tj) SOT-23-3 MOSFETs ROHS Podobny do: RTR040N03TL;
Micros part number: TCJ3400S3 TEC Info
Datasheet
Technical drawing Add to favourites
CJ3400S3 SOT23
  59mOhm 5,8A 1,4W SOT23 TECH PUBLIC 30V N-MOSFET -55°C ~ 150°C 12V SMD
 
Item available on a request
                                               
IPG20N06S2L35ATMA1 Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP
Micros part number: TIPG20n06s2l35 Info Add to favourites
IPG20N06S2L35ATMA1 TDSON-8
 
 
Item available on a request
                                               
TTA006B,Q(S TOSHIBA Power Transistor PNP 230V 1A 70MHz 3-Pin TO-126N
Micros part number: TTTA006B Info Technical drawing Add to favourites
TTA006B,Q(S TOSHIBA TO126
 
 
Item available on a request
                                               
PDTD114ETR NEXPERIA Trans Digital BJT NPN 50V 500mA Automotive 3-Pin TO-236AB T/R PDTD114ETR
Micros part number: TPDTD114etr Info Add to favourites
PDTD114ETR NEXPERIA  
 
 
Item available on a request
                                               
YFW10N65AF TO-220F YFW ODPOWIEDNIK: BXP10N65CF;
Micros part number: TYFW10N65AF YFW Info Add to favourites
YFW10N65AF TO-220F YFW TO220F
 
 
Item available on a request
                                               
YFW13N50AF TO220F YFW Odpowiednik: BXP18N50F; LGE18N50F; YFW13N50AF;
Micros part number: TYFW13N50AF YFW Info Add to favourites
YFW13N50AF TO220F YFW TO220F
 
 
Item available on a request
                                               
YFW18N20AC TO-220C YFW
Micros part number: TYFW18N20AC YFW Info Technical drawing Add to favourites
YFW18N20AC TO-220C YFW TO220
 
 
Item available on a request
                                               
Micros part number: TYFW18N20AF YFW Info Add to favourites
TO220F
 
 
Item available on a request
                                               
YFW2N65AD TO252 YFW Odpowiednik: BXP2N65D; LGE2N65D; YFW2N65AD;
Micros part number: TYFW2N65AD YFW Info Technical drawing Add to favourites
YFW2N65AD TO252 YFW TO252
 
 
Item available on a request
                                               
YFW2N65AMJ TO251 YFW Odpowiednik: BXP2N65U; LGE2N65U; YFW2N65AMJ;
Micros part number: TYFW2N65AMJ YFW Info Technical drawing Add to favourites
YFW2N65AMJ TO251 YFW TO251 (IPACK)
 
 
Item available on a request
                                               
YFW4N65AD TO252 YFW High Voltage MOSFET LGE4N65D; YFW4N65AD; BXP4N65D;
Micros part number: TYFW4N65AD YFW Info Technical drawing Add to favourites
YFW4N65AD TO252 YFW TO252
 
 
Item available on a request
                                               
YFW4N65AF TO220F YFW High Voltage MOSFET YFW4N65AF; LGE4N65F; BXP4N65F;
Micros part number: TYFW4N65AF YFW Info Add to favourites
YFW4N65AF TO220F YFW TO220F
 
 
Item available on a request
                                               
YFW4N65AMJ TO-251S(3.5mm) YFW Trans 650V N-CHANNEL ENHANCEMENT MODE MOSFET; 4A; 650V; <2.8Ohm ODPOWIEDNIK: BXP4N65U;
Micros part number: TYFW4N65AMJ YFW Info Technical drawing Add to favourites
YFW4N65AMJ TO-251S(3.5mm) YFW TO251S (IPAK)
 
 
Item available on a request
                                               
YFW7N65AF TO-220F YFW TO-220F MOSFETs ROHS ODPOWIEDNIK: BXP7N65CF;
Micros part number: TYFW7N65AF YFW Info Add to favourites
YFW7N65AF TO-220F YFW TO220F
 
 
Item available on a request
                                               
YFW7N65AT TO-220AB YFW TO-220AB MOSFETs ROHS ODPOWIEDNIK: BXP7N65P;
Micros part number: TYFW7N65AT YFW Info Technical drawing Add to favourites
YFW7N65AT TO-220AB YFW TO220
 
 
Item available on a request
                                               
ZTX458 NPN 0.3A 400V 1W 50MHz
Micros part number: TZTX458 Info Technical drawing Add to favourites
ZTX458 TO92
  50MHz NPN
 
Item available on a request
                                               
BGH75N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
Micros part number: TBGH75N65ZF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH75N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 338W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N120HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
Micros part number: TBGH75N120HF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N120HF1 BASiC SEMICONDUCTOR Rys.TBGH75N120HF1
  TO247-3 BASiC SEMICONDUCTOR 398nC 568W 75A 200A 4,2V ~ 5,8V -40°C ~ 150°C 1200V THT 20V
 
Item available on a request
                                               
BGH50N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65ZF1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH50N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH50N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65HS1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65HS1 BASiC SEMICONDUCTOR Rys.TBGH50N65HS1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH50N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65HF1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65HF1 BASiC SEMICONDUCTOR Rys.TBGH50N65HF1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Micros part number: TBGH75N65HF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65HF1 BASiC SEMICONDUCTOR Rys.TBGH75N65HF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BGH75N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Micros part number: TBGH75N65HS1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65HS1 BASiC SEMICONDUCTOR Rys.TBGH75N65HS1
  TO247-3 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C 650V THT 20V
 
Item available on a request
                                               
BC857B BORN Transistor PNP; 475; 250mW; 45V; 100mA; 100MHz; -55°C ~ 150°C; Equivalent: BC857B,215; BC857B,235; BC857BLT1G; BC857BLT3G; BC857BE6327HTSA1; BC857BE6433HTMA1; BC857B RFG; BC857B-7-F; BC857B-TP;
Micros part number: TBC857b BORN Info Technical drawing Add to favourites
BC857B BORN SOT23
                                                   
Item available on a request
SOT23 BORN 250mW 475 100MHz 100mA 45V PNP -55°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2025-05-30
Quantity of pieces: 3000
                                               
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