Transistors (results: 9701)
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Open channel resistance
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Max. drain current
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Max. power loss
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Case
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Manufacturer
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Power dissipation
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Current gain factor
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Cutoff frequency
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Gate charge
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Max. dissipated power
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Max. drain-source voltage
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Max. collector current
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Max collector-emmiter voltage
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Max. collector current
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Max collector current (impulse)
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Forvard volatge [Vgeth]
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Transistor type
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Max. drain-gate voltage
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Operating temperature (range)
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Max. gate-source Voltage
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Mounting
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Collector-emitter voltage
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Gate-emitter voltage
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Transistor circuits [Y/N]
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BGH75N120HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
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Rys.TBGH75N120HF1
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TO247-3 | BASiC SEMICONDUCTOR | 398nC | 568W | 75A | 200A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 1200V | 20V | |||||||||||||||
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Item available on a request
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IPB020N10N5LFATMA1
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK
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D2PAK
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2mOhm | 176A | 313W | D2PAK | INFINEON | 100V | N-MOSFET | -55°C ~ 150°C | 20V | SMD | ||||||||||||||||
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Item available on a request
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BGH50N65ZF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65ZF1
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TO247-4 | BASiC SEMICONDUCTOR | 308nC | 297W | 50A | 200A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 650V | 20V | |||||||||||||||
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Item available on a request
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BGH50N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HS1
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TO247-3 | BASiC SEMICONDUCTOR | 308nC | 297W | 50A | 200A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 650V | 20V | |||||||||||||||
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Item available on a request
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BGH50N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
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Rys.TBGH50N65HF1
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TO247-3 | BASiC SEMICONDUCTOR | 308nC | 297W | 50A | 200A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 650V | 20V | |||||||||||||||
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Item available on a request
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IPD80R600P7
IPD80R600P7ATMA1
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Item available on a request
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IPA60R280P7S
IPA60R280P7SXKSA1
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Item available on a request
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BGH75N65HF1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HF1
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TO247-4 | BASiC SEMICONDUCTOR | 444nC | 405W | 75A | 300A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 650V | 20V | |||||||||||||||
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Item available on a request
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IPA040N06NXKSA1
Trans MOSFET N-CH 60V 69A 3-Pin(3+Tab) TO-220FP
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Item available on a request
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BGH75N65HS1 BASiC SEMICONDUCTOR
Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
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Rys.TBGH75N65HS1
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TO247-3 | BASiC SEMICONDUCTOR | 444nC | 405W | 75A | 300A | 4,2V ~ 5,8V | -40°C ~ 150°C | THT | 650V | 20V | |||||||||||||||
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Item available on a request
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BC857B BORN
Transistor PNP; 475; 250mW; 45V; 100mA; 100MHz; -55°C ~ 150°C; Equivalent: BC857B,215; BC857B,235; BC857BLT1G; BC857BLT3G; BC857BE6327HTSA1; BC857BE6433HTMA1; BC857B RFG; BC857B-7-F; BC857B-TP;
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SOT23
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Item available on a request
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SOT23 | BORN | 250mW | 475 | 100MHz | 100mA | 45V | PNP | -55°C ~ 150°C | ||||||||||||||||
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Item in delivery
Estimated time: 2025-06-30
Quantity of pieces: 3000
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