Transistors (results: 9828)

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Open channel resistance
Max. drain current
Max. power loss
Case
Manufacturer
Power dissipation
Current gain factor
Cutoff frequency
Gate charge
Max. dissipated power
Max. drain-source voltage
Max. collector current
Max collector-emmiter voltage
Max. collector current
Max collector current (impulse)
Forvard volatge [Vgeth]
Transistor type
Max. drain-gate voltage
Operating temperature (range)
Max. gate-source Voltage
Mounting
Collector-emitter voltage
Gate-emitter voltage
Transistor circuits [Y/N]
IPD35N10S3L26ATMA1 Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK
Micros part number: TIPD35n10s3l26 Info Add to favourites
IPD35N10S3L26ATMA1 DPAK
 
 
Item available on a request
                                               
IPI90N04S402 Trans MOSFET N-CH 40V 90A Automotive 3-Pin(3+Tab) TO-262
Micros part number: TIPI90n04s402 Info Technical drawing Add to favourites
IPI90N04S402 TO262
 
 
Item available on a request
                                               
IPC100N04S51R7ATMA1 Trans MOSFET N-CH 40V 100A Automotive 8-Pin TDSON EP
Micros part number: TIPC100n04s51r7 Info Technical drawing Add to favourites
IPC100N04S51R7ATMA1 TDSON08
 
 
Item available on a request
                                               
IPB60R180C7ATMA1 Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) D2PAK
Micros part number: TIPB60r180c7 Info Technical drawing Add to favourites
IPB60R180C7ATMA1 D2PAK
 
 
Item available on a request
                                               
BGH75N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 338W
Micros part number: TBGH75N65ZF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH75N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 338W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
IPC70N04S54R6ATMA1 Trans MOSFET N-CH 40V 70A Automotive 8-Pin TDSON EP
Micros part number: TIPC70n04s54r6 Info Technical drawing Add to favourites
IPC70N04S54R6ATMA1 TDSON08
 
 
Item available on a request
                                               
IPB60R060P7ATMA1 Trans MOSFET N-CH 600V 48A 3-Pin(2+Tab) D2PAK
Micros part number: TIPB60r060p7 Info Technical drawing Add to favourites
IPB60R060P7ATMA1 D2PAK
 
 
Item available on a request
                                               
IPB600N25N3GATMA1 Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK
Micros part number: TIPB600n25n3g Info Technical drawing Add to favourites
IPB600N25N3GATMA1 D2PAK
 
 
Item available on a request
                                               
BGH75N120HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 1,2kV; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 200A; power: 568W
Micros part number: TBGH75N120HF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N120HF1 BASiC SEMICONDUCTOR Rys.TBGH75N120HF1
  TO247-3 BASiC SEMICONDUCTOR 398nC 568W 75A 200A 4,2V ~ 5,8V -40°C ~ 150°C THT 1200V 20V
 
Item available on a request
                                               
BGH50N65ZF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-4; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65ZF1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65ZF1 BASiC SEMICONDUCTOR Rys.TBGH50N65ZF1
  TO247-4 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
BGH50N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65HS1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65HS1 BASiC SEMICONDUCTOR Rys.TBGH50N65HS1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
BGH50N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 50A; pulsed collector current: 200A; power: 297W
Micros part number: TBGH50N65HF1 Info
Datasheet
Technical drawing Add to favourites
BGH50N65HF1 BASiC SEMICONDUCTOR Rys.TBGH50N65HF1
  TO247-3 BASiC SEMICONDUCTOR 308nC 297W 50A 200A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
BGH75N65HF1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Micros part number: TBGH75N65HF1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65HF1 BASiC SEMICONDUCTOR Rys.TBGH75N65HF1
  TO247-4 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
BC857B BORN Transistor PNP; 475; 250mW; 45V; 100mA; 100MHz; -55°C ~ 150°C; Equivalent: BC857B,215; BC857B,235; BC857BLT1G; BC857BLT3G; BC857BE6327HTSA1; BC857BE6433HTMA1; BC857B RFG; BC857B-7-F; BC857B-TP;
Micros part number: TBC857b BORN Info Technical drawing Add to favourites
BC857B BORN SOT23
                                                   
Item available on a request
SOT23 BORN 250mW 475 100MHz 100mA 45V PNP -55°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2025-11-20
Quantity of pieces: 3000
                                               
TIP42CF TO-220F JSCJ Tranzystor PNP; Bipolar; 75; 65W; 100V; 6A; 3MHz; -55°C ~ 150°C;
Micros part number: TTIP42cf TO220F CJ Info
Datasheet
Technical drawing Add to favourites
TIP42CF TO-220F JSCJ TO220FP
                                                   
Item available on a request
TO220FP CJ 65W 75 3MHz 6A 100V PNP -55°C ~ 150°C
                                                     
Item in delivery
Estimated time: 2026-01-20
Quantity of pieces: 100
                                               
BGH75N65HS1 BASiC SEMICONDUCTOR Transistor IGBT; THT; TO247-3; technology: Field Stop, SiC SBD, Trench Collector-emitter voltage: 650V; gate-emitter voltage: 20V; collector current: 75A; pulsed collector current: 300A; power: 405W
Micros part number: TBGH75N65HS1 Info
Datasheet
Technical drawing Add to favourites
BGH75N65HS1 BASiC SEMICONDUCTOR Rys.TBGH75N65HS1
  TO247-3 BASiC SEMICONDUCTOR 444nC 405W 75A 300A 4,2V ~ 5,8V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
YGW40N65F1 LUXIN-SEMI Transistor IGBT ; 650V; 20V; 80A; 120A; 250W; 4V~6V; 90nC; -40°C~150°C; Similar to: IKW40N60H3FKSA1; IRGP4640DPBF;
Micros part number: TYGW40n65f1 Info
Datasheet
Technical drawing Add to favourites
YGW40N65F1 LUXIN-SEMI TO247
  TO247 LUXIN-SEMI 90nC 250W 80A 120A 4,0V ~ 6,0V -40°C ~ 150°C THT 650V 20V
 
Item available on a request
                                               
YGW50N65T1 LUXIN-SEMI Transistor IGBT ; 650V; 20V; 100A; 150A; 312W; 4V~6V; 180nC; -40°C~175°C; Similar to: IKW50N60TFKSA1; RGS00TS65EHRC11;
Micros part number: TYGW50n65t1 Info
Datasheet
Technical drawing Add to favourites
YGW50N65T1 LUXIN-SEMI TO247
  TO247 LUXIN-SEMI 180nC 312W 100A 150A 4,0V ~ 6,0V -40°C ~ 175°C THT 650V 20V
 
Item available on a request
                                               
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